Semiconductor light emitting element and method for manufacturing same
View Patent ↗According to one embodiment, a semiconductor light emitting element includes a conductive substrate, a bonding portion, an intermediate metal film, a first electrode, a semiconductor stacked body and a second electrode. The bonding portion is provided on the support substrate and including a first metal film. The intermediate metal film is provided on the bonding portion and having a larger linear expansion coefficient than the first metal film. The first electrode is provided on the intermediate metal film and includes a second metal film having a larger linear expansion coefficient than the intermediate metal film. The semiconductor stacked body is provided on the first electrode and including a light emitting portion. The second electrode is provided on the semiconductor stacked body.
1. A semiconductor light emitting element comprising:
a support substrate;
a semiconductor stacked body including a light emitting portion, the semiconductor stacked body having a first surface and a second surface opposite to the first surface;
a first electrode provided between the second surface and the support substrate;
a bonding portion provided between the first electrode and the support substrate; and
a film covering a side surface of the semiconductor stacked body, the bonding portion covering the first electrode, the bonding portion being in contact with the support substrate, the bonding portion including a first portion and a second portion the first portion provided between the first electrode and the second portion, the first portion extending beyond an outer edge of the second portion in a first direction that is parallel to the second surface, the first portion having a third surface that is parallel to the second surface, and the semiconductor stacked body and the film each having a portion contacting the first portion along the third surface.
2. The semiconductor light emitting element according to claim 1 , wherein
the first electrode has a first film being made of metal,
the first portion of the bonding portion includes:
a second film being made of metal, the second film being in contact with the second surface, the second film having a linear expansion coefficient smaller than a linear expansion coefficient of the first film; and
a third film being made of metal, the third film provided between the second film and the support substrate, the third film having a linear expansion coefficient smaller than a linear expansion coefficient of the second film.
3. The semiconductor light emitting element according to claim 2 , wherein
the second film includes an intermediate metal film, the intermediate metal film being in contact with the first film, and
the intermediate metal film being made of one selected from Ni, Pt, Rh, and Pd.
4. The semiconductor light emitting element according to claim 2 , wherein
the first film includes Ag, and
the third film includes Ti.
5. The semiconductor light emitting element according to claim 1 , wherein the side surface of the semiconductor stacked body is inclined to a plane which is orthogonal to the third surface.
6. The semiconductor light emitting element according to claim 1 , wherein the first surface has a surface area in a first plane parallel to the third surface that is smaller than a surface area of the second surface in a second plane parallel to the third surface.
7. The semiconductor light emitting element according to claim 1 , wherein a length in the first direction of the first portion of the bonding portion along the third surface is greater than a length in the first direction of the portion of the semiconductor stacked body along the third surface.
8. A semiconductor light emitting device, comprising:
a semiconductor light emitting element;
a molded body enclosing the semiconductor light emitting element; and
a terminal being in electrical continuity with the semiconductor light emitting element, the terminal provided outside the molded body,
the semiconductor light emitting element including:
a support substrate;
a semiconductor stacked body including a light emitting portion, the semiconductor stacked body having a first surface and a second surface opposite to the first surface;
a first electrode provided between the second surface and the support substrate;
a bonding portion provided between the first electrode and the support substrate; and
a film covering a side surface of the semiconductor stacked body,
the bonding portion covering the first electrode, the bonding portion being in contact with the support substrate, the bonding portion including a first portion and a second portion the first portion provided between the first electrode and the second portion, the first portion extending beyond an outer edge of the second portion in a first direction that is parallel to the second surface, the first portion having a third surface that is parallel to the second surface, and the semiconductor stacked body and the film each having a portion contacting the first portion along the third surface.