Semiconductor light-emitting device and method for manufacturing same
View Patent ↗A method for manufacturing a semiconductor light-emitting device includes forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer. The method includes forming a groove through the first semiconductor layer. The method includes forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove.
1. A method for manufacturing a semiconductor light-emitting device, comprising:
forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer;
forming a groove through the first semiconductor layer;
forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove; and
forming an insulating layer on the second major surface of the first semiconductor layer and on the electrodes, the insulating layer having a first surface above a lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface, wherein
the first semiconductor layer and the second semiconductor layer are formed on a substrate,
the substrate is removed after the forming the insulating layer,
the groove is formed after the removing the substrate.
2. The method of claim 1 , wherein the forming the phosphor layer includes:
applying a liquid resin mixed with phosphor particles onto the groove and the first major surface;
and curing the applied resin.
3. The method of claim 1 , wherein the phosphor layer is conformally formed along the first major surface and the side surface of the first semiconductor layer.
4. The method of claim 1 , wherein the groove is reached to the first surface of the insulating layer through the first semiconductor layer.
5. The method of claim 1 , wherein the phosphor layer is continuously formed on a step portion between the first surface of the insulating layer and the first major surface of the first semiconductor layer.
6. The method of claim 1 , wherein the phosphor layer is formed on the first surface of the insulating layer and is not formed on a side surface of the insulating layer.
7. The method of claim 1 , further comprising: after the forming the phosphor layer, performing singulation by dicing at the groove.
8. The method of claim 1 , further comprising: after the forming the phosphor layer, performing singulation by dicing at a portion outside the groove.
9. A method for manufacturing a semiconductor light-emitting device, comprising:
forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer;
forming a groove through the first semiconductor layer;
forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove; and
forming an insulating layer on the second major surface of the first semiconductor layer and on the electrodes, the insulating layer having a first surface above a lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface, wherein
the groove is reached to the first surface of the insulating layer through the first semiconductor layer.
10. A method for manufacturing a semiconductor light-emitting device, comprising:
forming a multilayer body including a first semiconductor layer having a first major surface and a second major surface which is an opposite side from the first major surface, a second semiconductor layer including a light-emitting layer laminated on the second major surface of the first semiconductor layer, and electrodes formed on the second major surface of the first semiconductor layer and on a surface of the second semiconductor layer on an opposite side from the first semiconductor layer;
forming a groove through the first semiconductor layer;
forming a phosphor layer on the first major surface and on a side surface of the first semiconductor layer in the groove; and
forming an insulating layer on the second major surface of the first semiconductor layer and on the electrodes, the insulating layer having a first surface above a lower surface of the second semiconductor layer and a second surface which is an opposite side from the first surface, wherein
the phosphor layer is formed on the first surface of the insulating layer and is not formed on a side surface of the insulating layer.