Nitride semiconductor light emitting device
View Patent ↗According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.
1. A nitride semiconductor light emitting device, comprising:
a first layer including an n-type nitride semiconductor;
an active layer formed on the first layer, and including an In-containing nitride semiconductor;
a GaN layer formed on the active layer;
a first AlGaN layer formed on the GaN layer, and having a first Al composition ratio;
a p-type second AlGaN layer formed on the first AlGaN layer, having a second Al composition ratio higher than the first Al composition ratio, and containing a larger amount of Mg than the GaN layer and the first AlGaN layer; and
a second layer formed on the second AlGaN layer, and including a p-type nitride semiconductor.
2. The nitride semiconductor light emitting device according to claim 1 , wherein the first Al composition ratio is greater than 0 and not greater than 0.01.
3. The nitride semiconductor light emitting device according to claim 1 , wherein a concentration of Mg in each of the GaN layer and the first AlGaN layer is not greater than 1E18 cm −3 .
4. The nitride semiconductor light emitting device according to claim 1 , wherein the first AlGaN layer has a smaller thickness than the GaN layer.
5. The nitride semiconductor light emitting device according to claim 1 , wherein
the active layer has a quantum well structure in which a barrier layer and a well layer are stacked, and
a layer in contact with the GaN layer is the well layer.
6. The nitride semiconductor light emitting device according to claim 1 , wherein a concentration of Mg in the GaN layer is not greater than 1E18 cm −3 .
7. The nitride semiconductor light emitting device according to claim 1 , wherein a concentration of Mg in the first AlGaN layer is not greater than 1E18 cm −3 .
8. The nitride semiconductor light emitting device according to claim 1 , wherein a concentration of Mg in the GaN layer is not greater than 1E18 cm −3 , the first AlGaN layer is formed on the GaN layer, the first Al composition ratio is greater than 0 and not greater than 0.01, a concentration of Mg in the first AlGaN layer is not greater than 1E18 cm −3 and the first AlGaN layer has a smaller thickness than the GaN layer.