Semiconductor device and method for manufacturing the same

1. A method for manufacturing an optical semiconductor device, comprising:

forming a plurality of light-emitting layers on a substrate;

forming a plurality of conductive portions on each of the light-emitting layers, the plurality of conductive portions being used to cause a current for exciting the light-emitting layers to flow through the light-emitting layers;

providing a sealing material between the plurality of conductive portions to form a sealing layer;

removing the substrate while supporting the light-emitting layers by a support body which includes the conductive portions and the sealing layer; and

forming a fluorescent layer containing phosphor particles on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed after removing the substrate.

2. The method for manufacturing an optical semiconductor device according to claim 1 , wherein

the plurality of the conductive portions include one of a positive electrode and a negative electrode, and

the method further comprises separating the light-emitting layers after removing the substrate, each separated light-emitting layer having at least one of the positive electrode and the negative electrode.

3. The method for manufacturing an optical semiconductor device according to claim 1 , further comprising:

separating the light-emitting layers by cutting between adjacent ones of the light-emitting layers after removing the substrate.

4. The method for manufacturing an optical semiconductor device according to claim 3 , wherein the cutting comprises using a dicer between adjacent ones of the light-emitting layers.

5. The method for manufacturing an optical semiconductor device according to claim 1 , further comprising:

forming a resultant stack including the light-emitting layers; and

separating the resultant stack into pieces after removing the substrate, each of the pieces including at least one of the light-emitting layers.

6. The method for manufacturing an optical semiconductor device according to claim 1 , wherein forming the sealing layer comprises filling a gap between adjacent ones of the light-emitting layers.

7. The method for manufacturing an optical semiconductor device according to claim 1 , further comprising:

forming a light-transmissive layer on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed after removing the substrate, the light-transmissive layer transmitting light from the light-emitting layers.

8. The method for manufacturing an optical semiconductor device according to claim 7 , wherein the light-transmissive layer has a wider width than a width of the light-emitting layers.

9. The method for manufacturing an optical semiconductor device according to claim 7 , comprising forming the light-transmissive layer to cover a gap between adjacent ones of the light-emitting layers.

10. A method for manufacturing an optical semiconductor device, comprising:

forming a plurality of light-emitting layers on a substrate;

forming a plurality of conductive portions on each of the light-emitting layers, the plurality of conductive portions being used to cause a current for exciting the light-emitting layers to flow through the light-emitting layers;

providing a sealing material between the plurality of conductive portions to form a sealing layer;

removing the substrate while supporting the light-emitting layers by a support body which includes the conductive portions and the sealing layer;

separating the light-emitting layers by cutting between adjacent ones of the light-emitting layers after removing the substrate; and

forming a light-transmissive layer on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions formed after removing the substrate and before separating the light-emitting layers, the light-transmissive layer transmitting light from the light-emitting layers.

11. The method for manufacturing an optical semiconductor device according to claim 10 , comprising forming the light-transmissive layer to cover a gap between adjacent ones of the light-emitting layers.

12. The method for manufacturing an optical semiconductor device according to claim 11 , wherein a side surface of the light-transmissive layer is flush with a side surface of the sealing layer after separating the light emitting layers.

13. The method for manufacturing an optical semiconductor device according to claim 11 , wherein the light-transmissive layer and the sealing layer are cut collectively in separating the light-emitting layers.

14. The method for manufacturing an optical semiconductor device according to claim 1 , wherein the fluorescent layer has a wider width than a width of the light-emitting layers.

15. The method for manufacturing an optical semiconductor device according to claim 1 , comprising forming the fluorescent layer to cover a gap between adjacent ones of the light-emitting layers.

16. The method for manufacturing an optical semiconductor device according to claim 1 , wherein a thickness of the fluorescent layer is smaller than a thickness of the sealing layer.

17. A method for manufacturing an optical semiconductor device, comprising:

forming a plurality of light-emitting layers on a substrate;

forming a plurality of conductive portions on each of the light-emitting layers, the plurality of conductive portions being used to cause a current for exciting the light-emitting layers to flow through the light-emitting layers;

providing a sealing material between the plurality of conductive portions to form a sealing layer;

removing the substrate while supporting the light-emitting layers by a support body which includes the conductive portions and the sealing layer;

separating the light-emitting layers by cutting between adjacent ones of the light-emitting layers after removing the substrate; and

forming a fluorescent layer containing phosphor particles on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed.

18. The method for manufacturing an optical semiconductor device according to claim 17 , comprising forming the fluorescent layer to cover a gap between adjacent ones of the light-emitting layers.

19. The method for manufacturing an optical semiconductor device according to claim 18 , wherein a side surface of the fluorescent layer is flush with a side surface of the sealing layer after separating the light emitting layers.

20. The method for manufacturing an optical semiconductor device according to claim 18 , wherein separating the light-emitting layers comprises collectively cutting the fluorescent layer and the sealing layer.

21. The method for manufacturing an optical semiconductor device according to claim 18 , wherein separating the light-emitting layers comprises collectively cutting at least a portion of the fluorescent layer and at least a portion of the sealing layer.

22. The method for manufacturing an optical semiconductor device according to claim 1 , comprising forming the conductive portions from metal.

23. The method for manufacturing an optical semiconductor device according to claim 1 , wherein each of the conductive portions includes at least one of an electrode, a rewiring layer, and a pillar.

24. The method for manufacturing an optical semiconductor device according to claim 1 , wherein the sealing material includes resin.

25. The method for manufacturing an optical semiconductor device according to claim 1 , wherein the sealing material includes thermosetting resin.

26. The method for manufacturing an optical semiconductor device according to claim 1 , comprising forming the sealing layer to continuously seal the plurality of light-emitting layers and the plurality of conductive portions.

27. The method for manufacturing an optical semiconductor device according to claim 1 , comprising forming the sealing layer to cover the plurality of light-emitting layers and the plurality of conductive portions.

28. The method for manufacturing an optical semiconductor device according to claim 1 , further comprising:

exposing end faces of the conductive portions from the sealing layer.

29. The method for manufacturing an optical semiconductor device according to claim 28 , further comprising:

forming a metal layer on the exposed end faces.

30. A method for manufacturing an optical semiconductor device, comprising:

forming a light-emitting layer on a substrate;

forming a plurality of conductive portions on the light-emitting layer, the plurality of conductive portions being used to cause a current for exciting the light-emitting layer to flow through the light-emitting layer;

providing a sealing material between the plurality of conductive portions to form a sealing layer;

removing the substrate while supporting the light-emitting layer by a support body which includes the conductive portions and the sealing layer; and

forming a fluorescent layer containing phosphor particles on a side of a surface of the light-emitting layer, which is opposite to a surface on which the conductive portions are formed after removing the substrate.

31. A method for manufacturing an optical semiconductor device, comprising:

forming a stacked structure, the stacked structure including a substrate, a light-emitting layer provided on the substrate, a plurality of conductive portions on the light-emitting layer, and a sealing layer provided between the conductive portions, the plurality of conductive portions being used to cause a current for exciting the light-emitting layer to flow through the light-emitting layer;

removing the substrate while supporting the light-emitting layer by a support body which includes the conductive portions and the sealing layer; and

forming a fluorescent layer containing phosphor particles on a side of a surface of the light-emitting layer, which is opposite to a surface on which the conductive portions are formed after removing the substrate.

32. The method for manufacturing an optical semiconductor device according to claim 30 , further comprising:

forming a light-transmissive layer on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed after removing the substrate, the light-transmissive layer transmitting light from the light-emitting layers.

33. The method for manufacturing an optical semiconductor device according to claim 32 , wherein the light-transmissive layer has a wider width than a width of the light-emitting layers.

34. The method for manufacturing an optical semiconductor device according to claim 30 , wherein the fluorescent layer has a wider width than a width of the light-emitting layers.

35. The method for manufacturing an optical semiconductor device according to claim 30 , comprising:

forming a plurality of light-emitting layers on the substrate;

forming a plurality of the conductive portions on each of the light-emitting layers; and

removing the substrate while supporting the light-emitting layers by the support body.

36. The method for manufacturing an optical semiconductor device according to claim 31 , further comprising:

forming a light-transmissive layer on a side of a surface of the light-emitting layers, which is opposite to a surface on which the conductive portions are formed after removing the substrate, the light-transmissive layer transmitting light from the light-emitting layers.

37. The method for manufacturing an optical semiconductor device according to claim 36 , wherein the light-transmissive layer has a wider width than a width of the light-emitting layers.

38. The method for manufacturing an optical semiconductor device according to claim 31 , wherein the fluorescent layer has a wider width than a width of the light-emitting layers.