Light emitting regions for use with light emitting devices

1. A light emitting diode (LED), comprising:

a first layer comprising an n-type Group III-V semiconductor;

a second layer adjacent to the first layer, the second layer comprising an active layer that generates light upon the recombination of electrons and holes and has a thickness between 50 nm and 200 nm;

a third layer adjacent to the second layer, the third layer comprising a p-type Group III-V semiconductor; and

a silicon substrate adjacent to one of either the first layer or the third layer,

wherein the active layer comprises one or more V-pits having one or more openings at an interface between the active layer and the third layer, the V-pits having a density between about 10 V-pits/μm 2 and 20 V-pits/μm 2 at the interface and a density between about 10% and 20% of a surface coverage of the interface.

2. The LED of claim 1 , wherein the active layer has a dislocation density between about 1×10 8 cm −2 and 5 ×10 9 cm −2 .

3. The LED of claim 1 , wherein the n-type Group III-V semiconductor comprises n-type gallium nitride and the p-type Group III-V semiconductor comprises p-type gallium nitride.

4. The LED of claim 1 , wherein the LED has an external quantum efficiency of at least about 50%.

5. The LED of claim 1 , wherein the n-type Group III-V semiconductor is an n-type gallium nitride (GaN) layer, and the V-pits are formed on or around defects in the n-type GaN layer.

6. A light emitting diode (LED), comprising:

a first layer having an n-type Group III-V semiconductor;

a second layer adjacent to the first layer, the second layer having an active layer that generates light upon the recombination of electrons and holes and has a thickness between 50 nm and 200 nm, the second layer having one or more V-pits at a density between about 10% and 20% of a surface coverage of the second layer and at a density between about 10 V-pits/μm 2 and 20 V-pits/μm 2 at a surface of the second layer; and

a third layer adjacent to the second layer, the third layer having a p-type Group III-V semiconductor.

7. The LED of claim 6 , further comprising a substrate adjacent to the first layer or third layer.

8. The LED of claim 7 , wherein the substrate is formed of silicon or sapphire.

9. The LED of claim 6 , wherein the LED has an external quantum efficiency of at least about 50%.

10. The LED of claim 6 , wherein the n-type Group III-V semiconductor comprises n-type gallium nitride and the p-type Group III-V semiconductor comprises p-type gallium nitride.

11. The LED of claim 6 , wherein the active layer comprises a plurality of quantum wells.

12. The LED of claim 6 , wherein the active layer comprises alternating gallium nitride and indium gallium nitride or indium aluminum gallium nitride thin films.

13. The LED of claim , wherein the active material layer has a dislocation density between about 1 ×10 8 cm −2 and 5×0 9 cm −2 .

14. The LED of claim 7 , wherein the n-type Group III-V semiconductor is an n-type gallium nitride (GaN) layer, and the V-pits are formed on or around defects in the n-type GaN layer.

15. A light emitting diode (LED), comprising:

an n-type gallium nitride (GaN) layer;

a p-type GaN layer; and

an active layer that is formed between the n-type GaN layer and the p-type GaN layer and has a thickness between 50 nm and 200 nm, the active layer comprising one or more V-pits having one or more openings at an interface between the active layer and the n-type GaN layer or the p-type GaN layer, the one or more openings consuming between about 10% and 20 % of the interface,

wherein the active layer includes the one or more openings at a density between about 10 V-pits/μm 2 and 20 V-pits/μm 2 at the interface.

16. The LED of claim 15 , further comprising a substrate adjacent to the n-type GaN layer or p-type GaN layer.

17. The LED of claim 16 , wherein the substrate is formed of silicon or sapphire.

18. The LED of claim 15 , wherein the active layer comprises one or more quantum well stacks, an individual stack comprising a barrier layer and a well layer adjacent to the barrier layer.

19. The LED of claim 15 , wherein the active layer includes a plurality of periods, and wherein at least one period of the plurality of periods includes indium gallium nitride layer or indium aluminum gallium nitride.

20. The LED of claim 19 , wherein the at least one period of the plurality of periods includes gallium nitride.

21. The LED of claim 15 , wherein said interface is between the active layer and the p-type GaN layer.

22. The LED of claim 15 , wherein the active layer has a dislocation density between about 1 ×10 8 cm −2 and 5×10 9 cm −2 .

23. The LED of claim 15 , wherein the V-pits are formed on or around defects in the n-type GaN layer.

24. An active layer for use in a light emitting diode (LED), comprising a light emitting layer having a thickness between 50 nm and 200 nm and one or more V-pits at coverage between about 10% and 20% of a surface,

wherein the light emitting layer includes the one or more V-pits at a density between about 10 V-pits/μm −2 and 20 V-pits/μm 2 at the surface.

25. The active layer of claim 24 , wherein the active layer has an external quantum efficiency of at least about 50%.

26. The active layer of claim 24 , wherein the active layer comprises a well layer and a barrier adjacent to the well layer.

27. The active layer of claim 26 , further comprising i) an additional barrier layer adjacent to the well layer, or ii) an additional well layer adjacent to the barrier layer.

28. The LED of claim 22 , wherein the light emitting material layer has a dislocation density between about 1 ×10 8 cm −2 and 5×10 9 cm −2 .