Semiconductor light emitting device
View Patent ↗A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.
1. A semiconductor light emitting device comprising:
an n-type semiconductor layer;
a p-type semiconductor layer;
an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, said active layer configured to emit light;
a p-electrode including a first conductive oxide region provided to be in contact with a first face of the p-type semiconductor layer opposite from the active layer, the first conductive oxide region including defects, and a second conductive oxide region provided on a second face of the first conductive oxide region opposite from the p-type semiconductor layer, the second conductive oxide region having a higher oxygen content than the oxygen content of the first conductive oxide region, wherein crystal grains in the first conductive oxide region are smaller than crystal grains in the second conductive oxide region, and the p-electrode has a contact resistance lower than 1×10 −2 Ωcm; and
an n-electrode connecting electrically to the n-type semiconductor layer.
2. The device according to claim 1 , wherein the first conductive oxide region contains at least one element selected from the group consisting of In, Zn, Sn, Ni, Mg, Cu, Au, Pd, Rh, and Ga.
3. The device according to claim 1 , wherein the p-electrode is transparent.
4. The device according to claim 1 , wherein the first conductive oxide region has a width that is not smaller than 10 nm and not greater than 100 nm, the width being a distance in a direction from the n-type semiconductor layer to the p-type semiconductor layer.
5. The device according to claim 1 , wherein the second conductive oxide region has a higher transmittance than a transmittance of the first conductive oxide region.
6. The device according to claim 1 , wherein the second conductive oxide region has an oxygen content more than 61 atomic %.
7. The device according to claim 1 , wherein the first conductive oxide region has an oxygen content lower than 40 atomic %.