Semiconductor light emitting element and method for manufacturing same

1. A semiconductor light emitting element comprising:

a stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type opposite to the first conductivity type, and a light emitting portion provided between the first semiconductor layer and the second semiconductor layer, the stacked body having a side surface which is formed by etching;

a first electrode provided on a side of a first surface of the stacked body;

a plurality of second electrodes selectively provided on a side of a second surface of the stacked body, the second surface being on an opposite side from the first surface;

a support substrate provided on the side of the second surface of the stacked body via a bonding metal;

a protective film provided on the side surface of the stacked body, and not on the second surface of the stacked body; and

a dielectric film having a portion provided between the bonding metal and the second surface of the stacked body, and another portion provided between the bonding metal and the protective film, the dielectric film surrounding the plurality of second electrodes and having a film thickness that is larger than a film thickness of the second electrodes.

2. The element according to claim 1 , wherein the dielectric film includes a multilayer film with a plurality of films of different refractive indexes stacked in the dielectric film.

3. The element according to claim 1 , wherein reflectance of the dielectric film for light emitted from the light emitting portion is higher than reflectance of the bonding metal for the light emitted from the light emitting portion.

4. The element according to claim 1 , wherein the dielectric film is a single layer film.

5. The element according to claim 1 , wherein the second electrode is formed on a region of the second surface side of the stacked body.

6. The element according to claim 1 , wherein the bonding metal includes a first metal provided on the second electrode side and a second metal provided on the support substrate side.

7. The element according to claim 6 , wherein the first metal is a multilayer metal film.

8. The element according to claim 6 , wherein the first metal is a multilayer metal film stacked in order of Ti/Pt/Au from the second electrode side.

9. The element according to claim 6 , wherein the second metal is a multilayer metal film.

10. The element according to claim 6 , wherein the second metal is a multilayer metal film stacked in order of Ti/Pt/Au/AuSn from the support substrate side.

11. The element according to claim 1 , wherein

on the second surface, the dielectric film is provided as a plurality of dielectric film portions, and the plurality of dielectric film portions and the plurality of second electrodes are alternately arranged, and

a plurality of reflective films are each provided on one of the plurality of dielectric film portions on a side of the dielectric film portion that is opposite the side of the second surface.

12. The element according to claim 11 , wherein each of the plurality of second electrodes and each of the plurality of reflective films are provided in a striped configuration along the second surface.

13. The element according to claim 1 , further comprising:

a plurality of reflective films which is in contact with the dielectric film on a side of the bonding metal.

14. The element according to claim 11 , wherein each of the dielectric film portions has an inclined surface with respect to the second surface.

15. A method for manufacturing a semiconductor light emitting element, comprising:

forming a stacked body including a first semiconductor layer of a first conductivity type, a light emitting portion, and a second semiconductor layer of a second conductivity type on a first substrate;

forming a dielectric film on a second surface of the stacked body on an opposite side from the first substrate;

exposing a part of the second surface of the stacked body by selectively removing the dielectric film, and forming a second electrode on the part of the second surface;

forming a reflective film on the dielectric film;

forming a metal layer on the second electrode to bond a second substrate via the metal layer;

peeling the first substrate from the stacked body by irradiating the first substrate with laser light on a side of the first substrate opposite to the second substrate;

selectively removing the stacked body by etching the stacked body from a side of the stacked body that is opposite the second surface, using the dielectric film as an etch stopper; and

forming a first electrode on the first surface.

16. The method according to claim 15 , wherein a bump/pit structure is provided by selectively removing the dielectric film.

17. The method according to claim 15 , wherein the dielectric film includes a multilayer film with a plurality of films of different refractive indices stacked in the dielectric film.

18. The method according to claim 15 , wherein

reflectance of the dielectric film for light emitted from the light emitting portion is higher than reflectance of the metal layer for the light emitted from the light emitting portion.

19. The element according to claim 13 , wherein the reflective film is a multilayer metal film containing at least Ag.