Semiconductor light emitting device and method for manufacturing the same
View Patent ↗According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, an insulating film, a p-side interconnection section, an n-side interconnection section, a phosphor layer, and a metal film. The semiconductor layer is formed on a substrate which is then removed. The p-side interconnection section is provided on the insulating film and electrically connected to the p-side electrode. The n-side interconnection section is provided on the insulating film and electrically connected to the n-side electrode. The phosphor layer is provided on the first surface and includes a step portion continued to the side surface of the semiconductor layer. The metal film is provided on the side surface of the semiconductor layer and a side surface of the step portion of the phosphor layer.
1. A semiconductor light emitting device comprising:
a semiconductor layer including a major surface, a side surface connected to the major surface, and a light emitting layer;
a p-side electrode directly contacting the semiconductor layer on a major surface side of the semiconductor layer;
an n-side electrode directly contacting the semiconductor layer on the major surface side of the semiconductor layer;
an insulating film provided on the p-side electrode, the n-side electrode and the side surface of the semiconductor layer;
a p-side interconnection section electrically connected to the p-side electrode through a p-side via penetrating through the insulating film;
an n-side interconnection section electrically connected to the n-side electrode through an n-side via penetrating through the insulating film;
a phosphor layer including a first portion and a second portion, the first portion being between the second portion and the semiconductor layer in a first direction, the first direction crossing the major surface of the semiconductor layer, the second portion covering the first portion in the first direction, a portion of the second portion extending beyond the first portion in a second direction crossing the first direction, a bottom surface of the portion of the second portion being connected to a side surface of the first portion, the side surface of the first portion being oblique to the bottom surface of the portion of the second portion; and
a metal film provided on the side surface of the semiconductor layer via the insulating film, and on the side surface of the first portion of the phosphor layer via the insulating film, the insulating film being between the metal film and the portion of the second portion extending beyond the first portion, wherein
the semiconductor layer is between the p-side electrode and the phosphor layer in the first direction, and between the n-side electrode and the phosphor layer in the first direction.
2. The device according to claim 1 ,
wherein the insulation film is an inorganic film and provided between the side surface of the semiconductor layer and the metal film and between the side surface of the first portion of the phosphor layer and the metal film.
3. The device according to claim 1 , wherein the insulating film has a film thickness of half an emission wavelength of the light emitting layer.
4. The device according to claim 1 , wherein the side surface of the semiconductor layer is oblique to the major surface.
5. The device according to claim 1 , wherein the side surface of the first portion of the phosphor layer is oblique to the major surface.
6. The device according to claim 1 , wherein the metal film is connected integrally with part of the n-side interconnection section.
7. The device according to claim 1 , wherein the metal film contains aluminum.
8. The device according to claim 1 , wherein
unevenness is formed on a surface of the semiconductor layer facing the phosphor layer, and
an adhesion layer is provided between, in the first direction, the semiconductor layer and the phosphor layer, the adhesion layer having an adhesive force with respect to the phosphor layer that is greater than an adhesive force between the phosphor layer and the semiconductor layer.
9. The device according to claim 1 , wherein the phosphor layer is provided on the semiconductor layer without a substrate being interposed between the phosphor layer and the semiconductor layer.
10. The device according to claim 1 , wherein a radiated light of the light emitting layer can be output in the first direction from the phosphor layer.
11. The device according to claim 1 , further comprising a second insulating film provided between the phosphor layer and the semiconductor layer in the first direction.
12. The device according to claim 1 , wherein
the metal film is provided on the major surface of the semiconductor layer via the insulating film, and
the semiconductor layer is provided between the metal film and the phosphor layer in the first direction.
13. The device according to claim 1 , wherein
the p-side interconnection section includes:
a p-side interconnect layer, and
a p-side metal pillar; and
the n-side interconnection section includes:
a n-side interconnect layer, and
a n-side metal pillar.
14. The device according to claim 13 , wherein the semiconductor layer is between, in the first direction, the p-side pillar and the phosphor layer, and between, in the first direction, the n-side pillar and the phosphor layer.
15. The device according to claim 1 , wherein the semiconductor layer is between, in the first direction, the p-side interconnection section and the phosphor layer, and between, in the first direction, the n-side interconnection section and the phosphor layer.
16. The device according to claim 1 , further comprising a resin provided between the p-side interconnection section and n-side interconnection section.
17. The device according to claim 16 , wherein the semiconductor layer is provided between, in the first direction, the resin and the phosphor layer.
18. The device according to claim 16 , wherein
the resin is provided on the side surface of the semiconductor layer, and,
in the second direction, the metal film is between the first portion of the phosphor layer and the resin on the side surface of the semiconductor layer.
19. A semiconductor light emitting device comprising:
a semiconductor layer including a major surface, a side surface connected to the major surface, and a light emitting layer;
a p-side electrode directly contacting the semiconductor layer on a major surface side of the semiconductor layer;
an n-side electrode directly contacting the semiconductor layer on the major surface side of the semiconductor layer;
an insulating film provided on the p-side electrode, the n-side electrode and the side surface of the semiconductor layer;
a p-side interconnection section electrically connected to the p-side electrode through a p-side via penetrating through the insulating film;
an n-side interconnection section electrically connected to the n-side electrode through an n-side via penetrating through the insulating film;
a phosphor layer including a first portion and a second portion, the first portion being between the second portion and the semiconductor layer in a first direction, the first direction crossing the major surface of the semiconductor layer, the second portion covering the first portion in the first direction and a portion of the second portion extending beyond the first portion in a second direction crossing the first direction, a bottom surface of the portion of the second portion being connected to a side surface of the first portion, the side surface of the first portion being oblique to the bottom surface of the portion of the second portion;
an inorganic insulating film on the side surface and the major surface of the semiconductor layer, the inorganic insulating film extending from the major surface of the semiconductor layer along the side surface of the semiconductor layer and the side surface of the first portion of the phosphor layer; and
a metal film provided on the side surface of the semiconductor layer via the inorganic insulating film, and on the side surface of the first portion of the phosphor layer via the inorganic insulating film, the inorganic insulating film being between the metal film and the portion of the second portion extending beyond the first portion, wherein
the semiconductor layer is between the p-side electrode and the phosphor layer, in the first direction, and between the n-side electrode and the phosphor layer in the first direction.
20. The device according to claim 19 , wherein the inorganic insulating film has a film thickness of half an emission wavelength of the light emitting layer.
21. The device according to claim 19 , wherein the side surface of the semiconductor layer is oblique to the major surface.
22. The device according to claim 19 , wherein the side surface of the first portion of the phosphor layer is oblique to the major surface.
23. The device according to claim 19 , wherein the metal film is connected integrally with part of the n-side interconnection section.
24. The device according to claim 19 , wherein the metal film contains aluminum.
25. The device according to claim 19 , wherein
unevenness is formed on a surface of the semiconductor layer facing the phosphor layer, and
an adhesion layer is provided between, in the first direction, the semiconductor layer and the phosphor layer, the adhesion layer having an adhesive force with respect to the phosphor layer that is greater than an adhesive force between the phosphor layer and the semiconductor layer.
26. The device according to claim 19 , wherein the phosphor layer is provided on the semiconductor layer without a substrate being interposed between the phosphor layer and the semiconductor layer.
27. The device according to claim 19 , wherein a radiated light of the light emitting layer can be output in the first direction from the phosphor layer.
28. The device according to claim 19 , further comprising a second insulating film provided between the phosphor layer and the semiconductor layer in the first direction.
29. The device according to claim 19 , wherein
the metal film is provided on the major surface of the semiconductor layer via the inorganic insulating film, and
the semiconductor layer is provided between the metal film and the phosphor layer in the first direction.
30. The device according to claim 19 , wherein
the p-side interconnection section includes:
a p-side interconnect layer, and
a p-side metal pillar; and
the n-side interconnection section includes:
a n-side interconnect layer, and
a n-side metal pillar.
31. The device according to claim 30 , wherein the semiconductor layer is between, in the first direction, the p-side pillar and the phosphor layer, and between, in the first direction, the n-side pillar and the phosphor layer.
32. The device according to claim 19 , wherein the semiconductor layer is between, in the first direction, the p-side interconnection section and the phosphor layer, and between, in the first direction, the n-side interconnection section and the phosphor layer.
33. The device according to claim 19 , further comprising a resin provided between the p-side interconnection section and n-side interconnection section.
34. The device according to claim 33 , wherein the semiconductor layer is provided between, in the first direction, the resin and the phosphor layer.
35. The device according to claim 33 , wherein
the resin is provided on the side surface of the semiconductor layer, and,
in the second direction, the metal film is between the first portion of the phosphor layer and a portion of the resin disposed on the side surface of the semiconductor layer.
36. A semiconductor light emitting device, comprising:
a semiconductor layer including a first semiconductor layer, a second semiconductor layer and a light emitting layer, the first semiconductor layer having a first surface, a second surface opposite to the first surface, the second semiconductor layer having a third surface facing the second surface and a fourth surface opposite to the third surface, the light emitting layer provided between the first surface and the fourth surface in a first direction crossing the first surface;
a p-side electrode contacting the fourth surface;
an n-side electrode contacting the second surface;
an insulating film provided on the p-side electrode, the n-side electrode and a side surface of the semiconductor layer;
a p-side interconnection section electrically connected to the p-side electrode through a p-side via penetrating through the insulating film;
an n-side interconnection section electrically connected to the n-side electrode through an n-side via penetrating through the insulating film;
a phosphor layer provided on the first surface, the phosphor layer including a first portion and a second portion, the first portion provided on the first surface, the second portion provided on the first portion, the first portion having a fifth surface facing the first surface, the first portion having a side surface continued from the fifth surface, and the first portion being between the second portion and the first surface in the first direction, a width of the second portion in a second direction perpendicular to the first direction being greater than a width of the first portion in the second direction, a bottom surface of a portion of the second portion that is extending beyond the first portion in the second direction, the bottom surface of the portion being connected to the side surface of the first portion, the side surface of the first portion being oblique to the bottom surface of the portion; and
a metal film provided on the side surface of the semiconductor layer, via the insulating film, and on the side surface of the first portion of the phosphor layer, the side surface of the first portion being in direct contact with the insulating film, the insulating film being between, in the first direction, the metal film and the portion of the second portion extending beyond first portion.
37. The device according to claim 36 , further comprising a second insulating film provided between the phosphor layer and the first surface of the first semiconductor layer.
38. The device according to claim 36 , wherein the metal film is provided on the second surface of the first semiconductor layer.
39. The device according to claim 36 , wherein the insulating film is between the side surface of the semiconductor layer and the metal film and between the side surface of the first portion of the phosphor layer and the metal film.
40. The device according to claim 39 , wherein the insulating film has a film thickness of half an emission wavelength of the light emitting layer.
41. The device according to claim 36 , wherein the side surface of the semiconductor layer is oblique to the first surface of the first semiconductor layer.
42. The device according to claim 36 , wherein the side surface of the first portion of the phosphor layer is oblique to the first surface of the first semiconductor layer.
43. The device according to claim 36 , wherein the metal film is connected integrally with part of the n-side interconnection section.
44. The device according to claim 36 , wherein the metal film contains aluminum.
45. The device according to claim 36 , wherein
unevenness is formed on the first surface of the first semiconductor layer, and
an adhesion layer is provided between the first surface and the phosphor layer, the adhesion layer having an adhesive force with respect to the phosphor layer that is greater than an adhesive force between the phosphor layer and the first semiconductor layer.