Semiconductor light emitting device and method of fabricating semiconductor light emitting device
View Patent ↗A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.
1. A semiconductor light emitting device, comprising:
a light emitting element comprising a nitride-based III-V compound semiconductor on a substrate; and
first and second electrodes disposed on both sides of the light emitting element, respectively;
wherein the light emitting element comprises:
a light emitting layer;
a first conductive type semiconductor layer disposed between the light emitting layer and the first electrode; and
a second conductive type semiconductor layer disposed between the light emitting layer and the second electrode,
one surface of the first conductive type semiconductor layer contacting the first electrode and being a light extraction surface which comprises a rough pattern of stripe shape, the rough pattern having two or more kinds of oblique angles.
2. The device of claim 1 , further comprising a refractive index relaxation film disposed on the light extraction surface of the first conductive type semiconductor layer.
3. The device of claim 1 , wherein the light extraction surface has the oblique angles θ 1 and θ 2 with respect to a normal line direction of a substrate surface, where 20°<θ1<40°, and 0°<θ2<20°.
4. The device of claim 1 , wherein the light emitting element is formed by laminating a plurality of layers each including Al x Ga 1-x-y In y N, where 0≦x≦1 and 0≦y≦1.
5. The device of claim 1 , wherein the light emitting element is a forward tapered shape configured to gradually narrow widths in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
6. A method of fabricating a semiconductor light emitting device, comprising:
forming a rough pattern with two or more kinds of oblique angles on a surface of a peel-off target substrate by using a mask pattern of stripe shape;
forming a light emitting element comprising a nitride-based III-V compound semiconductor on a surface with the rough pattern of the peel-off target substrate;
forming a support substrate on the light emitting element;
peeling off the peel-off target substrate by laser lift off to form the light emitting element comprising a light extraction surface which comprises a rough pattern of stripe shape, the rough pattern having two or more kinds of oblique angles;
isolating the light emitting element into a plurality of light emitting devices;
forming an insulating film on at least sidewalls of the plurality of light emitting devices; and
forming electrodes on upper surfaces of the plurality of light emitting devices and surfaces of the support substrate disposed at opposite side of the plurality of light emitting devices, respectively.
7. The method of claim 6 , wherein the peel-off target substrate is a sapphire substrate or a SiC substrate.
8. The method of claim 6 , a reflective index relaxation film is formed on the light extraction surface of each of the light emitting device.
9. The method of claim 6 , wherein a mask pattern is baked, and then an edge of the mask pattern is rounded, and then the mask pattern is transferred to the peel-off target substrate to form the rough pattern.
10. The method of claim 9 , wherein the mask pattern is modified into a hemisphere by a surface tension.
11. The method of claim 9 , wherein the rough pattern has at least two kinds of oblique angles θ 1 and θ 2 with respect to a normal line direction of a substrate surface, where 20°<θ1<40°, and 0°<θ2<20°.
12. The method of claim 6 , wherein the rough pattern is formed on the peel-off target substrate by being repeatedly transferred to the peel-off target substrate by using two kinds of mask patterns in order.
13. The method of claim 6 , wherein the light emitting element is formed by laminating a plurality of layers each including Al x Ga 1-x-y In y N, where 0≦x≦1 and 0≦y≦1.
14. The method of claim 6 , wherein in forming the electrodes, a first electrode is formed on the light extraction surface, and a second electrode is formed on an upper surface of the support substrate; and
in forming the light emitting element, a first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode, and a second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode.
15. The method of claim 14 , wherein each of the plurality of light emitting devices is a forward tapered shape configured to gradually narrow widths in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.
16. A method of fabricating a semiconductor light emitting device, comprising:
forming a rough pattern with two or more kinds of oblique angles on a surface of a peel-off target substrate by using a mask pattern of stripe shape;
forming a light emitting element comprising a nitride-based III-V compound semiconductor on a surface with the rough pattern of the peel-off target substrate;
forming a support substrate on the light emitting element;
peeling off the peel-off target substrate by laser lift off to form the light emitting element comprising a light extraction surface roughly processed so as to have two or more kinds of oblique angles;
isolating the light emitting element into a plurality of light emitting devices;
forming an insulating film on at least sidewalls of the plurality of light emitting devices; and
forming electrodes on upper surfaces of the plurality of light emitting devices and surfaces of the support substrate disposed at opposite side of the plurality of light emitting devices, respectively,
wherein a mask pattern is baked, and then an edge of the mask pattern is rounded, and then the mask pattern is transferred to the peel-off target substrate to form the rough pattern.
17. The method of claim 16 , wherein the peel-off target substrate is a sapphire substrate or a SiC substrate.
18. The method of claim 16 , a reflective index relaxation film is formed on the light extraction surface of each of the light emitting device.
19. The method of claim 16 , wherein the mask pattern is modified into a hemisphere by a surface tension.
20. The method of claim 16 , wherein the rough pattern is formed on the peel-off target substrate by being repeatedly transferred to the peel-off target substrate by using two kinds of mask patterns in order.
21. The method of claim 16 , wherein the rough pattern has at least two kinds of oblique angles θ 1 and θ 2 with respect to a normal line direction of a substrate surface, where 20°<θ1<40°, and 0°<θ2<20°.
22. The method of claim 16 , wherein the light emitting element is formed by laminating a plurality of layers each including Al x Ga 1-x-y In y N, where 0≦x≦1 and 0≦y≦1.
23. The method of claim 16 , wherein in forming the electrodes, a first electrode is formed on the light extraction surface, and a second electrode is formed on an upper surface of the support substrate; and
in forming the light emitting element, a first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode, and a second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode.
24. The method of claim 23 , wherein the rough pattern has at least two kinds of oblique angles θ 1 and θ 2 with respect to a normal line direction of a substrate surface, where 20°<θ1<40°, and 0°<θ2<20°.