IP Library Granted Patent US 9,318,664
Granted Patent B2
US 9,318,664 · App. 13/616,580 · Granted Apr 19, 2016

Semiconductor light emitting element and method for manufacturing same

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Quick Facts
Patent No.
US 9,318,664
App. No.
13/616,580
Granted
Apr 19, 2016
Kind
B2
Abstract

According to one embodiment, a semiconductor light emitting element includes: a support substrate; a bonding layer provided on the support substrate; an LED layer provided on the bonding layer; and a buffer layer softer than the bonding layer. The buffer layer is placed in one of between the support substrate and the bonding layer and between the bonding layer and the LED layer.

Claims (38)

1. A semiconductor light emitting element comprising:

a support substrate;

a first metal layer provided on the support substrate;

a bonding layer provided on the first metal layer, the bonding layer consisting of an alloy containing a first component and a second component;

a second metal layer provided on the bonding layer;

an LED layer provided on the second metal layer; and

a buffer layer containing the first component, the buffer layer being softer than the bonding layer,

each of the first metal layer and the second metal layer including:

a layer containing titanium, and

a layer containing platinum; and

the buffer layer being placed in one of between the support substrate and the first metal layer and between the second metal layer and the LED layer.

2. The element according to claim 1 , further comprising another buffer layer placed in the other of between the support substrate and the first metal layer and between the second metal layer and the LED layer, and the another buffer layer being softer than the bonding layer.

3. The element according to claim 1 , further comprising a reflection layer placed between the LED layer and the buffer layer and between the LED layer and the bonding layer.

4. The element according to claim 3 , wherein the reflection layer contains silver.

5. The element according to claim 3 , further comprising a conductive alloying suppression layer provided between the reflection layer and the LED layer, not reacting to form an alloy between the reflection layer and the LED layer, and being conductive.

6. The element according to claim 1 , further comprising an insulating current narrowing layer selectively placed on a current path of a current supplied to the LED layer.

7. The element according to claim 1 , wherein

the first component is gold, and

the second component is indium.

8. A semiconductor light emitting element comprising:

a support substrate;

a first metal layer provided on the support substrate;

a bonding layer provided on the first metal layer, the bonding layer consisting of an alloy containing a first component and a second component;

a second metal layer provided on the bonding layer;

an LED layer provided on the second metal layer; and

a buffer layer containing the first component, the buffer layer being softer than the bonding layer,

each of the first metal layer and the second metal layer including:

a layer containing titanium; and

a layer containing platinum,

the buffer layer being placed in one of between the first metal layer and the bonding layer and between the bonding layer and the second metal layer.

9. The element according to claim 8 , further comprising another buffer layer placed in the other of between the first metal layer and the bonding layer and between the bonding layer and the second metal layer, and the another buffer layer being softer than the bonding layer.

10. The element according to claim 8 , further comprising a reflection layer placed between the LED layer and the buffer layer and between the LED layer and the bonding layer.

11. The element according to claim 10 , wherein the reflection layer contains silver.

12. The element according to claim 10 , further comprising a conductive alloying suppression layer provided between the reflection layer and the LED layer, not reacting to form an alloy between the reflection layer and the LED layer, and being conductive.

13. The element according to claim 8 , further comprising an insulating current narrowing layer selectively placed on a current path of a current supplied to the LED layer.

14. The element according to claim 8 , wherein

the first component is gold, and

the second component is indium.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2012
From: NUNOTANI, SHINJI; AKAIKE, YASUHIKO; NATSUME, YOSHINORI; FURUKAWA, KAZUYOSHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 029373/0578 →