Semiconductor light emitting device

1. A semiconductor light emitting device comprising:

a first semiconductor layer of a first conductivity type having a first surface and a second surface on an opposite side to the first surface;

a second semiconductor layer of a second conductivity type provided on a side of the second surface of the first semiconductor layer;

a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

a dielectric layer in contact with the second surface, the dielectric layer having a refractive index lower than a refractive index of the first semiconductor layer;

a first electrode including a first portion and a second portion,

the first portion in contact with the second surface, the first portion provided adjacent to the dielectric layer, the first portion having a first length in a first direction along the second surface, the first portion having a second length in a second direction perpendicular to the first direction,

the second portion in contact with an opposite side of the dielectric layer from the first semiconductor layer;

a second electrode having a portion,

the portion in contact with an opposite side of the second semiconductor layer from the light emitting layer, the portion having a third length in the second direction; and

a support substrate provided on an opposite side of the second electrode from the second semiconductor layer and electrically connected to the second electrode.

2. The device according to claim 1 , wherein

the first portion extends in a first direction along the second surface and

the first length is longer than the second length.

3. The device according to claim 2 , wherein the second length is shorter than the third length.

4. The device according to claim 1 , wherein an area of the portion of the second electrode is larger than an area of the first electrode.

5. The device according to claim 1 , wherein

the first electrode includes an extension portion provided up to an outside of the first semiconductor layer and

the device further comprises a pad provided on an opposite side of the extension portion from the support substrate and in contact with the extension portion.

6. The device according to claim 5 , wherein

the first portion extends from the pad side in the first direction and

a length in the second direction of the pad is longer than a length in the second direction of the first electrode.

7. The device according to claim 1 , wherein the dielectric layer further includes a portion covering the first electrode on an opposite side of the first electrode from the first semiconductor layer.

8. The device according to claim 1 , wherein the first electrode includes:

a first conductive layer including the first portion; and

a second conductive layer including the second portion, in contact with an opposite side of the first conductive layer from the first semiconductor layer, and containing a different material from the first conductive layer.

9. The device according to claim 8 , wherein the dielectric layer is in contact with a peripheral portion of the first conductive layer on an opposite side to the first semiconductor layer.

10. The device according to claim 1 , wherein the first electrode includes:

a first conductive layer including the first portion and the second portion; and

a second conductive layer in contact with the first conductive layer on an opposite side of the first conductive layer from the first semiconductor layer and containing a material different from a material of the first conductive layer.

11. The device according to claim 1 , wherein

the dielectric layer is provided in contact with a portion of the second electrode on an opposite side to the second semiconductor layer and

the second portion is provided up to a position overlapping with the second electrode as viewed from a direction from the second semiconductor layer toward the first semiconductor layer.

12. The device according to claim 1 , wherein the second electrode includes:

a contact portion in contact with the second semiconductor layer; and

a bonding metal portion provided on an opposite side of the contact portion from the second semiconductor layer, in contact with the support substrate, and provided to overlap with the first electrode as viewed from a direction from the second semiconductor layer toward the first semiconductor layer.

13. The device according to claim 1 , wherein the first portion is disposed on an opposite side of the second portion from the second electrode when projected onto a plane parallel to the second surface.

14. The device according to claim 1 , wherein the first semiconductor layer has concavities-convexities provided at the first surface, the concavities-convexities provided with a pitch not less than a peak wavelength of emitted light emitted from the light emitting layer.

15. The device according to claim 1 , wherein

the first conductivity type is an n type and

the second conductivity type is a p type.

16. The device according to claim 1 , wherein a material of at least a portion of the second electrode on a side in contact with the second semiconductor layer contains Ag.

17. The device according to claim 1 , wherein a material of at least a portion of the first electrode on a side in contact with the second surface contains Ti, Au, Al, Ag, or an alloy containing one of them, or ITO.

18. The device according to claim 1 , wherein the dielectric layer contains SiO 2 , SiN, or SiON.

19. The device according to claim 1 , wherein the first semiconductor layer is GaN.

20. The device according to claim 1 , wherein a refractive index of the first semiconductor layer is higher than a refractive index of the dielectric layer.