Semiconductor light emitting apparatus having stacked reflective dielectric films
View Patent ↗A method for manufacturing a semiconductor light emitting apparatus includes causing a semiconductor light emitting device and a mounting member to face each other. The semiconductor light emitting device includes a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer, a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer, and a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on at least a portion of a rim of at least one of the first and second electrodes. The mounting member includes a connection member connected to at least one of the first and second electrodes. The method further includes causing the connection member to contact and join to the at least one of the first and second electrodes using the protruding portion as a guide.
1. A semiconductor light emitting apparatus, comprising:
a semiconductor light emitting device;
a mounting member; and
a connection member,
the semiconductor light emitting device including:
a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;
a first electrode provided on a major surface of the stacked structure unit to connect to the first semiconductor layer;
a second electrode provided on the major surface of the stacked structure unit to connect to the second semiconductor layer; and
a dielectric stacked film provided on the first semiconductor layer and the second semiconductor layer of the major surface not covered by the first electrode and the second electrode, formed of stacked dielectric films having different refractive indexes, and including a protruding portion erected on a rim of at least one of the first and second electrodes; and
a conductive guide film provided on at least one of a first position on the first electrode not covered by the dielectric stacked film, a second position on the second electrode not covered by the dielectric stacked film, a third position on a first upper face of the dielectric stacked film on a peripheral portion of the first electrode, a fourth position on a second upper face of the dielectric stacked film on a peripheral portion of the second electrode, and a fifth position on a side faces of the dielectric stacked film,
the mounting member being provided to face the major surface of the semiconductor light emitting device, and
the connection member being provided between the semiconductor light emitting device and the mounting member, the connection member connecting the first electrode with the mounting member and connecting the second electrode with the mounting member, the connection member being welded to the at least one of the first electrode and the second electrode and covering a portion of the protruding portion.
2. The apparatus according to claim 1 , wherein a height of the connection member is higher than a height of the protruding portion.
3. The apparatus according to claim 1 , wherein the dielectric stacked film covers an end of at least one of the first electrode and the second electrode.
4. The apparatus according to claim 1 , wherein the dielectric stacked film reflects light emitted by the light emitting layer.
5. The apparatus according to claim 1 , wherein the dielectric stacked film includes a plurality of first dielectric layers having a first refractive index alternately stacked with a plurality of second dielectric layers having a second refractive index different from the first refractive index, a thickness of the first dielectric layer being λ/(4n 1 ) and a thickness of the second dielectric layer being λ/(4n 2 ), where n 1 is the first refractive index, n 2 is the second refractive index, and λ is a light emission wavelength of the light emitting layer.
6. The apparatus according to claim 1 , wherein the connection member includes solder.