Semiconductor light emitting device
View Patent ↗According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
1. A semiconductor light emitting device, comprising:
a first semiconductor layer of a first conductivity type;
a light emitting unit provided on the first semiconductor layer;
a second semiconductor layer of a second conductivity type provided on the light emitting unit;
a reflecting electrode provided on the second semiconductor layer and including Ag;
an oxide layer provided on the reflecting electrode, the oxide layer being insulative and having a first opening; and
a nitrogen-containing layer provided on the oxide layer, the oxide layer being disposed between the reflecting electrode and the nitrogen-containing layer, the nitrogen-containing layer being insulative and having a second opening communicating with the first opening.
2. The device according to claim 1 , wherein a surface area of a portion of the reflecting electrode exposed at the first opening and the second opening is less than a surface area of a portion of the reflecting electrode covered with the oxide layer.
3. The device according to claim 1 , wherein the oxide layer includes an oxide of at least one selected from Si, Ge, Ti, Zr, Hf, Ce, Y, and La.
4. The device according to claim 3 , wherein the nitrogen-containing layer includes a nitride or an oxynitride of at least one selected from Si, Ge, Ti, Zr, Hf, and Ce.
5. The device according to claim 1 , wherein a thickness of the oxide layer is not less than 1 nanometer and not more than 100 nanometers.
6. The device according to claim 1 , wherein a thickness of the nitrogen-containing layer is not less than 1 nanometer and not more than 10 nanometers.
7. The device according to claim 1 , wherein
the first semiconductor layer includes an n-type GaN layer, and
the second semiconductor layer includes a p-type GaN layer.
8. The device according to claim 1 , further comprising a metal layer,
the nitrogen-containing layer being provided between the oxide layer and the metal layer,
the metal layer covering a side face of the nitrogen-containing layer and a side face of the oxide layer, and
the metal layer being electrically connected with the reflecting electrode via the first opening and the second opening.
9. The device according to claim 8 , wherein
the metal layer covers the side face of the nitrogen-containing layer in the second opening, and
the metal layer covers the side face of the oxide layer in the first opening.
10. The device according to claim 1 , wherein
a part of the oxide layer covers an end portion of the reflecting electrode.
11. The device according to claim 10 , wherein a part of the nitrogen-containing layer covers the part of the oxide layer.
12. The device according to claim 11 , further comprising a metal layer electrically connected with the reflecting electrode via the first opening and the second opening,
the metal layer covering the part of the nitrogen-containing layer.
13. The device according to claim 1 , further comprising a metal layer electrically connected with the reflecting electrode via the first opening and the second opening,
the metal layer covering the oxide layer and the nitrogen-containing layer.
14. A semiconductor light emitting device, comprising:
a first semiconductor layer of a first conductivity type;
a light emitting unit provided on the first semiconductor layer;
a second semiconductor layer of a second conductivity type provided on the light emitting unit;
a reflecting electrode provided on the second semiconductor layer, the reflecting electrode including Ag;
an oxide layer provided on the reflecting electrode, the oxide layer being conductive; and
an oxynitride layer provided on the oxide layer, the oxide layer being disposed between the reflecting electrode and the oxynitride layer and in direct contact with the reflecting electrode and the oxynitride layer, the oxynitride layer being conductive.
15. The device according to claim 14 , wherein the oxide layer includes an oxide of at least one selected from In, Zn, and Sn.
16. The device according to claim 15 , wherein the oxynitride layer includes at least one selected from In, Zn, and Sn.
17. The device according to claim 14 , wherein a thickness of the oxide layer is not less than 1 nanometer and not more than 100 nanometers.
18. The device according to claim 14 , wherein a thickness of the oxynitride layer is not less than 1 nanometer and not more than 10 nanometers.
19. The device according to claim 14 , wherein
the first semiconductor layer includes an n-type GaN layer, and
the second semiconductor layer includes a p-type GaN layer.
20. The device according to claim 14 , wherein a light emitted from the light emitting unit is reflected by the reflecting electrode and is emitted to outside from the first semiconductor layer.
21. The device according to claim 14 , further comprising a metal layer,
the oxynitride layer being provided between the oxide layer and the metal layer,
the metal layer covering a side face of the oxynitride layer and a side face of the oxide layer, and
the metal layer being electrically connected with the reflecting electrode via the first opening and the second opening.
22. The device according to claim 21 , wherein
the metal layer covers the side face of the oxynitride layer in the second opening, and
the metal layer covers the side face of the oxide layer in the first opening.
23. The device according to claim 14 , wherein
a part of the oxide layer covers an end portion of the reflecting electrode.
24. The device according to claim 23 , wherein a part of the oxynitride layer covers the part of the oxide layer.
25. The device according to claim 24 , further comprising a metal layer electrically connected with the reflecting electrode via the first opening and the second opening,
the metal layer covering the part of the oxynitride layer.
26. The device according to claim 14 , further comprising a metal layer electrically connected with the reflecting electrode via the first opening and the second opening,
the metal layer covering the oxide layer and the oxynitride layer.
27. A semiconductor light emitting device, comprising:
a first semiconductor layer of a first conductivity type;
a light emitting unit provided on the first semiconductor layer;
a second semiconductor layer of a second conductivity type provided on the light emitting unit;
a reflecting electrode provided on the second semiconductor layer, the reflecting electrode including Ag;
an oxide layer provided on the reflecting electrode on an opposite side of the reflecting electrode than the second semiconductor layer, the oxide layer being conductive; and
a nitrogen-containing layer provided on the oxide layer, the oxide layer being disposed between the reflecting electrode and the nitrogen-containing layer and in direct contact with the reflecting electrode and the nitrogen-containing layer, the nitrogen-containing layer being conductive.