Semiconductor light emitting element, method for manufacturing the same, and light emitting device
View Patent ↗The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
1. A semiconductor light emitting element comprising:
a semiconductor substrate;
an n-type GaN layer that is provided on the semiconductor substrate;
a light emitting layer that is provided on the n-type GaN layer and has a multiquantum well structure having barrier layers and well layers alternately stacked; and
a contact layer that is provided on the light emitting layer and is made of p-type GaN,
a mean refractive index of the barrier layers and the well layers being lower than a mean refractive index of the layers existing on and under the light emitting layer.
2. The element according to claim 1 , further comprising
an overflow preventing layer that has a larger bandgap than the barrier layers and prevents holes from overflowing, the overflow preventing layer being provided between the light emitting layer and the n-type GaN layer.
3. A light emitting device comprising:
a support member;
a semiconductor light emitting element according to claim 1 that is supported by the support member;
a resin material that is formed to cover at least part of the semiconductor light emitting element; and
a fluorescent material that is diffused in the resin material, absorbs at least part of light emitted from the semiconductor light emitting element, wavelength-converts the absorbed light, and emits the wavelength-converted light.