Patent Assignment
Reel/Frame 027783/0466
Release of Security Interest
Recorded: 2012-02-29
Pages: 6
Assignor
SILICON VALLEY BANK
Executed: 2012-02-02
Assignee
NITRONEX CORPORATION
2305 PRESIDENTIAL DRIVE, DURHAM, NORTH CAROLINA, 27703
Covered Properties
(7)
Semiconductor structures including a gallium nitride material component and a silicon germanium component
Application:
10/047,455 →
Publication:
US 2003/0132433
Gallium nitride materials and methods
Application:
10/675,798 →
Publication:
US 2004/0119067
Gallium nitride material structures including isolation regions and methods
Application:
10/879,695 →
Publication:
US 2005/0145851
Gallium nitride materials including thermally conductive regions
Application:
11/050,598 →
Publication:
US 2005/0127397
Gallium nitride material devices including an electrode-defining layer and methods of forming the same
Application:
11/477,834 →
Publication:
US 2006/0249750
Gallium Nitride Material Devices and Methods of Forming the Same
Application:
11/762,985 →
Publication:
US 2007/0295985
Semiconductor Device-Based Sensors and Methods Associated with the Same
Application:
12/023,500 →
Publication:
US 2008/0185616
Related Assignments
(4)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement
May 4, 2010
From: NITRONEX CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 024320/0896 →
Security Agreement
Apr 6, 2012
From: NITRONEX CORPORATION
To: GAAS LABS, LLC
Reel/Frame 028003/0947 →
Assignment of Assignor's Interest
Mar 17, 2016
From: WEEKS, JR., T. WARREN; PINER, EDWIN LANIER; GEHRKE, THOMAS; LINTHICUM, KEVIN
To: INTERNATIONAL RECTIFIER CORPORATION
Reel/Frame 038016/0715 →
Merger and Change of Name
Mar 17, 2016
From: INTERNATIONAL RECTIFIER CORPORATION; INFINEON TECHNOLOGIES AMERICAS CORP.
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 038016/0919 →