Patent Assignment
Reel/Frame 027968/0686
Assignment of Assignor's Interest
Recorded: 2012-04-01
Pages: 3
Assignors
HUNG, CHIEN-CHUNG
Executed: 2012-03-23
CHEN, YOUNG-SHYING
Executed: 2012-03-23
YEN, CHENG-TYNG
Executed: 2012-03-23
LEE, CHWAN-YING
Executed: 2012-03-23
Assignee
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
NO. 195, SEC. 4, CHUNG HSING RD., CHUTUNG,, HSINCHU, 31040, TAIWAN
Covered Property
(1)
Trench Mos Transistor Having a Trench Doped Region Formed Deeper Than the Trench Gate