Assignment of Assignor's Interest

Recorded: 2012-09-13 Pages: 2

Assignors

SUMIDA, HITOSHI

Executed: 2012-08-24

TOYODA, YOSHIAKI

Executed: 2012-08-24

OHI, AKIHIKO

Executed: 2012-08-24

TANAKA, HIROYUKI

Executed: 2012-08-24

NISHIMURA, TAKEYOSHI

Executed: 2012-08-24

Assignee

FUJI ELECTRIC CO., LTD.

1-1 TANABESHINDEN, KAWASAKI-KU, KAWASAKI-SHI, 210-9530, JAPAN

Covered Property (1)

Mos-Driven Semiconductor Device and Method for Manufacturing Mos-Driven Semiconductor Device

Patent: 9,553,185 →

Application: 13/634,603 →

Publication: US 2013/0001681

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.