IP Library Assignment 029086/0162
Patent Assignment
Reel/Frame 029086/0162

Assignment of Assignor's Interest

Recorded: 2012-10-05 Pages: 2
Assignors
AIGO, TAKASHI
Executed: 2012-07-25
TSUGE, HIROSHI
Executed: 2012-07-25
HOSHINO, TAIZO
Executed: 2012-07-25
FUJIMOTO, TATSUO
Executed: 2012-07-25
KATSUNO, MASAKAZU
Executed: 2012-07-25
NAKABAYASHI, MASASHI
Executed: 2012-07-25
YASHIRO, HIROKATSU
Executed: 2012-07-25
Assignee
NIPPON STEEL CORPORATION
6-1, MARUNOUCHI 2-CHOME, CHIYODA-KU, TOKYO, 100-8071, JAPAN
Covered Property (1)
Process for Producing Epitaxial Silicon Carbide Single Crystal Substrate and Epitaxial Silicon Carbide Single Crystal Substrate Obtained by the Same
Patent: 9,691,607 →
Application: 13/639,309 →
Publication: US 2013/0029158
Related Assignments (4)
Other recorded transfers of the patent in this record — the chain of ownership.
Merger Feb 7, 2013
From: NIPPON STEEL CORPORATION
To: NIPPON STEEL & SUMITOMO METAL CORPORATION
Reel/Frame 029769/0741 →
Assignment of Assignor's Interest Apr 20, 2018
From: NIPPON STEEL & SUMITOMO METAL CORPORATION
To: SHOWA DENKO K.K.
Reel/Frame 045991/0704 →
Change of Name Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
Change of Address Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →