License

Recorded: 2012-10-17 Pages: 2

Assignor

HUGA OPTOTECH INC.

Executed: 2012-07-11

Assignee

1F., NO.30, INDUSTRY EAST ROAD 4., HSINCHU SCIENCE PARK, HSINCHU CITY, 30077, TAIWAN

Covered Properties (2)

Fabrication Method of High-Brightness Light Emitting Diode Having Reflective Layer

Patent: 7,384,808 →

Application: 11/180,002 →

Publication: US 2007/0020788

High-Brightness Light Emitting Diode Having Reflective Layer

Patent: 7,335,924 →

Application: 11/180,013 →

Publication: US 2007/0012937

Related Assignments (1)

Other recorded transfers of the patents in this record — the chain of ownership.