Patent Assignment
Reel/Frame 040350/0699
Assignment of Assignor's Interest
Recorded: 2016-10-13
Pages: 9
Assignor
HUGA OPTOTECH INC.
Executed: 2016-09-23
Assignee
EPISTAR CORPORATION
5 LI HSIN 5TH RD., SCIENCE BASED INDUSTRIAL PARK, HSINCHU, TAIWAN
Covered Properties
(64)
Light-Emitting Diode Having a Layer of Algainp Graded Composition
Patent:
6,100,544 →
Application:
09/081,760 →
Light-Emitting Diode Having a Transparent Substrate
Patent:
6,064,076 →
Application:
09/082,036 →
Light Emitting Diode with a Permanent Subtrate of Transparent Glass or Quartz and the Method for Manufacturing the Same
Patent:
6,258,699 →
Application:
09/307,681 →
Light Emitting Diode with a Metal-Coated Reflective Permanent Substrate and the Method for Manufacturing the Same
Patent:
6,287,882 →
Application:
09/411,945 →
Fabrication Method of High-Brightness Light Emitting Diode Having Reflective Layer
High-Brightness Light Emitting Diode Having Reflective Layer
Light emitting diode having enhanced side emitting capability
Application:
11/348,650 →
Publication:
US 2007/0181905
Flip-Chip Packaging Structure for Light Emitting Diode and Method Thereof
Method for Dicing a Diced Optoelectronic Semiconductor Wafer
Light Emitting Diode Structure
Epi-Structure with Uneven Multi-Quantum Well and the Method Thereof
Semiconductor Light-Emitting Device and Method of Fabricating the Same
Light emitting device and method for making the same
Application:
11/801,155 →
Publication:
US 2008/0277678
Light emitting device and method for making the same
Application:
11/801,201 →
Publication:
US 2008/0277686
Light Emitting Device and Methods for Forming the Same
Method of Treating Substrate
Optoelectronic device
Application:
11/984,062 →
Publication:
US 2009/0008624
Led Packaged Structure and Applications of Led as Light Source
Semiconductor Structure Combination for Epitaxy of Semiconductor Optoelectronic Device
Semiconductor light-emitting device with low-density defects and method of fabricating the same
Application:
11/987,646 →
Publication:
US 2009/0008657
Optoelectronic device
Application:
11/998,405 →
Publication:
US 2009/0008625
Semiconductor Light-Emitting Device with High Light-Extraction Efficiency and Method for Fabricating the Same
Optoelectronic device
Application:
12/000,610 →
Publication:
US 2009/0008626
Semiconductor light-emitting device with high heat-dissipation efficiency and method for fabricating the same
Application:
12/010,188 →
Publication:
US 2009/0039366
Light Optoelectronic Device and Forming Method Thereof
Semiconductor Light-Emitting Device with High Light-Extraction Efficiency
Flip-Chip Packaging Method for Light Emitting Diode with Eutectic Layer Not Overlapping Insulating Layer
Semiconductor Light-Emitting Device
Semiconductor Light-Emitting Device and Method of Fabricating the Same
Application:
12/128,402 →
Publication:
US 2009/0101886
High Efficiency Lighting Device
High Efficiency Lighting Device and Manufacturing Method Thereof
Application:
12/182,289 →
Publication:
US 2010/0025705
Semiconductor Light-Emitting Device
Wafer Carrier and Epitaxy Machine Using the Same
Application:
12/194,013 →
Publication:
US 2009/0308319
Semiconductor Light-Emitting Device and Method of Fabricating the Same
Application:
12/246,339 →
Publication:
US 2009/0029497
Light-Emitting Diode Device with a Double-Layer Contact Structure and a Fabrication Method Thereof
Semiconductor Light-Emitting Device
Application:
12/327,367 →
Publication:
US 2010/0059773
Light Emitting Diode and Method
Optical Device and the Forming Method Thereof
Light Emitting Device Having Pillar Structure with Roughness Surface and the Forming Method Thereof
Light-Emitting Diode Device with High Luminescent Efficiency
Light-Emitting Diode
Light-Emitting Diode with High Lighting Efficiency
Light-Emitting Diode with High Lighting Efficiency
Light-Emitting Device Structure and Semiconductor Wafer Structure with the Same
Light Emitting Device with Pillar Structure Having Hollow Structure
Ohmic Contact Film in Semiconductor Device
Application:
12/426,061 →
Publication:
US 2009/0200667
Light-Emitting Diode Having Additional Stack Structure
Light-Emitting Diode and Method for Fabricating the Same
Light-Emitting Diode
Substrate for fabricating light emitting device and light emitting device fabricated therefrom
Application:
12/453,409 →
Publication:
US 2010/0006862
Wafer Carrier and Epitaxy Machine Using the Same
Application:
12/648,849 →
Publication:
US 2010/0101496
Light-Emitting Device
Semiconductor Light Emitting Devices with a Substrate Having a Plurality of Bumps
Semiconductor Devices
Semiconductor Light-Emitting Device
Semiconductor Light-Emitting Device
Light-Emitting Semiconductor Device
Light-Emitting Semiconductor Device
Application:
13/084,782 →
Publication:
US 2011/0284895
Light-Emitting Device
Semiconductor Light-Emitting Structure
Semiconductor Light-Emitting Structure
Substrate for Fabricating Light Emitting Device and Light Emitting Device Fabricated Therefrom
Application:
13/527,598 →
Publication:
US 2012/0258285
Semiconductor Light Emitting Device
Light-Emitting Device
Application:
61/232,553 →
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
License
Oct 17, 2012
From: HUGA OPTOTECH INC.
To: SHIN-ETSU OPTO ELECTRONIC CO., LTD.
Reel/Frame 029140/0623 →
Assignment of Assignor's Interest
Dec 17, 2025
From: EPISTAR CORPORATION
To: TAU CETI VENTURES LLC
Reel/Frame 073969/0972 →
Change of Name
Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →