Light optoelectronic device and forming method thereof
View Patent ↗The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided on the first nitrogen-containing compound layer, a second nitrogen-containing compound layer is provided on the II/V group compound layer, and a third nitrogen-containing compound layer is provided on the second nitrogen-containing compound layer, an epi-stacked structure with a multi-layer structure is formed on the buffer layer, which includes a first semiconductor conductive layer is formed on the buffer layer, an active layer is formed on the first semiconductor conductive layer, a multi-layer structure is formed between the first semiconductor conductive layer and the active layer, and a second semiconductor conductive layer is formed on the active layer.
1. An optoelectronic device with an epi-stacked structure, comprising:
a substrate;
a buffer layer formed on said substrate, said buffer layer comprising at least:
a first nitride based compound layer on said substrate;
a II/V group compound layer on said first nitride-containing compound layer;
a second nitride-containing compound layer on said II/V group compound layer; and
a third nitride-containing compound layer on said second nitride-containing compound layer; and
an epi-stacked structure formed on said buffer layer, wherein said epi-stacked structure comprises:
a first semiconductor conductive layer formed on said buffer layer;
a multi-layer structure with an average energy gap (Eg (avg,SRS) ) formed on said first semiconductor conductive layer, the multi-layer structure comprising:
a first semiconductor structure with an energy gap Eg 1 having a thickness t 1 ;
a second semiconductor structure with an energy gap Eg 2 having a thickness t 2 ; and
a third semiconductor structure with an energy gap Eg 3 sequentially stacked and having a thickness t 3 ;
wherein said average energy gap of the multi-layer structure satisfies
E
g
(
avg
,
S
R
S
)
=
(
t
1
E
g
1
+
t
2
E
g
2
+
t
3
E
g
3
)
t
1
+
t
2
+
t
3
;
an active layer with an energy gap (Eg ,active ) formed on said multi-layer structure wherein said energy gap (Eg ,active ) of said active layer is different from said average energy gap (Eg (avg,SRS) ) of said multi-layer structure; and
a second semiconductor conductive layer formed on said active layer.
2. The optoelectronic device with the epi-stacked structure according to claim 1 , wherein said second nitride-containing compound layer is an AlGaN layer.
3. The optoelectronic device with the epi-stacked structure according to claim 1 , wherein said third nitride-containing compound layer is an Al x In y Ga 1-x-y N layer.
4. The optoelectronic device with the epi-stacked structure according to claim 1 , wherein said first semiconductor conductive layer comprises at least a first portion and an exposed second portion.
5. The optoelectronic device with the epi-stacked structure according to claim 1 , wherein said multi-layer semiconductor structure layer comprises a plurality of multi-layer semiconductor structures.
6. The optoelectronic device with the epi-stacked structure according to claim 1 , wherein said active layer is selected from the groups consisting of: InGaN layer, multi quantum well (MQW) and a quantum well (QW).
7. An optoelectronic device with a multi-layer structure, comprising:
a substrate;
an epi-stacked structure formed on said substrate, wherein said epi-stacked structure comprises:
an active layer with an energy gap (Eg ,active )
a multi-layer structure with an average energy gap (Eg (avg,SRS) ) the multi-layer structure comprising:
a first semiconductor structure with an energy gap Eg 1 having a thickness t 1 ;
a second semiconductor structure with an energy gap Eg 2 having a thickness t 2 ; and
a third semiconductor structure with an energy gap Eg 3 sequentially stacked and having a thickness t 3 ;
wherein said average energy gap of multi-layer structure satisfies
E
g
(
avg
,
S
R
S
)
=
(
t
1
E
g
1
+
t
2
E
g
2
+
t
3
E
g
3
)
t
1
+
t
2
+
t
3
,
and said energy gap (Eg ,active ) of said active layer is different from said average energy gap (Eg avg,SRS) ) of said multi-layer structure.
8. The optoelectronic device with the multi-layer structure according to claim 7 , said multi-layer structure are undoped components.
9. The optoelectronic device with the multi-layer structure according to claim 7 , wherein the first semiconductor structure, the second semiconductor structure and the third semiconductor structure are respectively GaN layer, AlGaN layer and InGaN layer.
10. The optoelectronic device with the multi-layer structure according to claim 7 , wherein the multi-layer structure formed over the active layer.
11. The optoelectronic device with the multi-layer structure according to claim 7 , wherein the multi-layer structure formed below the active layer.