Light-emitting device structure and semiconductor wafer structure with the same
View Patent ↗A light-emitting device structure comprises a substrate having a first region and a second region outside the first region, a first conductive type semiconductor layer positioned on the first region, a light-emitting structure positioned on the first conductive type semiconductor layer, a second conductive type semiconductor layer positioned on the light-emitting structure, and a wall structure positioned on the second region.
1. A light-emitting device structure, comprising:
a substrate having a first region and a second region outside the first region;
a first conductive type semiconductor layer positioned on the first region;
a light-emitting structure positioned on the first conductive type semiconductor layer;
a second conductive type semiconductor layer positioned on the light-emitting structure; and
a wall structure positioned on the second region, wherein the first conductive type semiconductor layer includes a top end and a bottom end, and the wall structure includes a top end between the top end and the bottom end of the first conductive type semiconductor layer.
2. The light-emitting device structure of claim 1 , wherein the wall structure surrounds the first region.
3. The light-emitting device structure of claim 1 , wherein the wall structure includes a sidewall surface, which is wavy, arc-shaped, scraggy, or zigzag.
4. The light-emitting device structure of claim 1 , wherein the lateral thickness of the wall structure varies periodically.
5. The light-emitting device structure of claim 1 , wherein the lateral thickness of the wall structure varies non-periodically.
6. The light-emitting device structure of claim 1 , wherein the wall structure includes at least two concavities.
7. The light-emitting device structure of claim 1 , comprising a plurality of wall structures separated from each other.
8. The light-emitting device structure of claim 1 , comprising a plurality of wall structures arranged in a staggered manner.
9. A light-emitting device structure, comprising:
a substrate having a first region and a second region outside the first region;
a first conductive type semiconductor layer positioned on the first region;
a light-emitting structure positioned on the first conductive type semiconductor layer;
a second conductive type semiconductor layer positioned on the light-emitting structure; and
a wall structure positioned on the second region, wherein the light-emitting structure includes a top end and a bottom end, and the wall structure includes a top end between the top end and the bottom end of the light-emitting structure.
10. The light-emitting device structure of claim 9 , wherein the wall structure surrounds the first region.
11. The light-emitting device structure of claim 9 , wherein the wall structure includes a sidewall surface, which is wavy, arc-shaped, scraggy, or zigzag.
12. The light-emitting device structure of claim 9 , wherein the lateral thickness of the wall structure varies periodically.
13. The light-emitting device structure of claim 9 , wherein the lateral thickness of the wall structure varies non-periodically.
14. The light-emitting device structure of claim 9 , wherein the wall structure includes at least two concavities.
15. The light-emitting device structure of claim 9 , comprising a plurality of wall structures separated from each other.
16. The light-emitting device structure of claim 9 , comprising a plurality of wall structures arranged in a staggered manner.
17. A light-emitting device structure, comprising:
a substrate having a first region and a second region outside the first region;
a first conductive type semiconductor layer positioned on the first region;
a light-emitting structure positioned on the first conductive type semiconductor layer;
a second conductive type semiconductor layer positioned on the light-emitting structure; and
a wall structure positioned on the second region, wherein the second conductive type semiconductor layer includes a top end and a bottom end, and the wall structure includes a top end between the top end and the bottom end of the second conductive type semiconductor layer.
18. The light-emitting device structure of claim 17 , wherein the wall structure surrounds the first region.
19. The light-emitting device structure of claim 17 , wherein the wall structure includes a sidewall surface, which is wavy, arc-shaped, scraggy, or zigzag.
20. The light-emitting device structure of claim 17 , wherein the lateral thickness of the wall structure varies periodically.
21. The light-emitting device structure of claim 17 , wherein the lateral thickness of the wall structure varies non-periodically.
22. The light-emitting device structure of claim 17 , wherein the wall structure includes at least two concavities.
23. The light-emitting device structure of claim 17 , comprising a plurality of wall structures separated from each other.
24. The light-emitting device structure of claim 17 , comprising a plurality of wall structures arranged in a staggered manner.