Light emitting diode and method
View Patent ↗A light emitting diode and methods of forming the same are provided. The light emitting diode includes an epitaxy chip having a first substrate, a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer on the first substrate; a second substrate holding the epitaxy chip; an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip; a first electrode on the first portion of the isolation layer; and a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connect to the first conductive semiconductor layer and the second conductive semiconductor layer.
1. A light emitting diode, comprising:
an epitaxy chip having an epitaxial stack and a first substrate underlying the epitaxial stack, wherein the epitaxial stack has a first conductive semiconductor layer, a light emitting layer and a second conductive semiconductor layer;
a second substrate holding the epitaxy chip;
an isolation layer on the second substrate, the isolation layer having a first portion connecting to one side of the epitaxy chip and a second portion connecting to another side of the epitaxy chip;
a first electrode on the first portion of the isolation layer; and
a second electrode on the second portion of the isolation layer, wherein the first electrode and the second electrode respectively and electrically connects to the first conductive semiconductor layer and the second conductive semiconductor layer;
wherein none of the first and second electrodes covers the first or second conductive semiconductor layer.
2. The light emitting diode of claim 1 , wherein the first and second electrodes are disposed on the same side of the light emitting layer.
3. The light emitting diode of claim 1 , wherein upper surfaces of the isolation layer and the second conductive semiconductor layer are coplanar.
4. The light emitting diode of claim 1 , wherein the isolation layer is made of spin-on glass, silicon resin, benzocyclobutene, epoxy, polyimide, or prefluorocyclobutene.
5. The light emitting diode of claim 1 , further comprising:
a first transparent conductive layer over the first portion of the isolation layer, wherein the first transparent conductive layer connects to the first electrode and the first conductive semiconductor layer; and
a second transparent conductive layer over the second portion of the isolation layer, wherein the second transparent conductive layer connects to the second electrode and the second conductive semiconductor layer.
6. The light emitting diode of claim 5 , wherein the first portion of the isolation layer has a vertical sidewall, and the first transparent conductive layer covers the vertical sidewall.
7. The light emitting diode of claim 5 , wherein the first and second transparent conductive layers are indium tin oxide, cadmium tin oxide, zinc oxide, or zinc tin oxide.
8. The light emitting diode of claim 1 , wherein the isolation layer surrounds the epitaxy chip.
9. The light emitting diode of claim 1 , further comprising:
an adhesion layer between the first and second substrates.
10. The light emitting diode of claim 9 , wherein the adhesion layer is made of spin-on glass, silicon resin, benzocyclobutene, epoxy, polyimide, or prefluorocyclobutene.
11. The light emitting diode of claim 1 , further comprising:
a reflection layer between the first and second substrates.