Epi-structure with uneven multi-quantum well and the method thereof

1. An epi-structure applied to a light-emitting device, comprising:

a substrate;

a first semiconductor conductive layer formed on said substrate;

an active layer formed on said first semiconductor conductive layer, wherein said active layer has a plurality of uneven multiple quantum wells; and

a second semiconductor conductive layer formed on said active layer;

wherein a plurality of particles made from at least one hetero-material are scattered between said first semiconductor conductive layer and said active layer and configured for formation of said uneven multiple quantum well.

2. An epi-structure according to claim 1 , wherein each one of said uneven multiple quantum well has a cross section with a ratio of width to height in a range between 3 to 1 and 1 to 10.

3. An epi-structure according to claim 1 , wherein said substrate is made from a material selected from the groups consisting of sapphire, GaN, SiC, GaAs, AlN, GaP, Si, ZnO, MgO and glass material.

4. An epi-structure according to claim 1 , wherein said first semiconductor conductive layer is an N-Type semiconductor layer.

5. An epi-structure according to claim 1 , wherein said first semiconductor conductive layer is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

6. An epi-structure according to claim 1 , wherein said multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

7. An epi-structure according to claim 1 , wherein said second semiconductor conductive layer is a P-Type semiconductor layer.

8. An epi-structure according to claim 1 , wherein said second semiconductor conductive layer is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

9. An epi-structure according to claim 1 , wherein said particles made from the hetero-material comprise a hetero-material different from the first semiconductor conductive layer.

10. An epi-structure according to claim 1 , wherein said particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, III-V group compound, II-V group compound and II-VI group compound.

11. An epi-structure according to claim 1 , wherein each one of said uneven multiple quantum well has a surface roughness Ra in a range between 0.5 and 50 nanometers.

12. An epi-structure according to claim 11 , wherein each one of said uneven multiple quantum well has the surface roughness Ra in the range between 30 and 40 nanometers.

13. A light-emitting device, comprising:

a first electrode;

a substrate formed on said first electrode;

a first semiconductor conductive layer formed on said substrate;

an active layer formed on said first semiconductor conductive layer, wherein said active layer have a plurality of uneven multiple quantum well;

a second semiconductor conductive layer formed on said active layer;

a transparent conductive layer formed on said second semiconductor conductive layer; and

a second electrode formed on said transparent conductive layer;

wherein a plurality of particles made from at least one hetero-material are scattered between said first semiconductor conductive layer and said active layer and configured for formation of the uneven multiple quantum well.

14. A light-emitting device according to claim 13 , wherein the multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

15. A light-emitting device according to claim 13 , wherein the transparent conductive layer is made from a material selected from the groups consisting of Ni/Au, NiO/Au, Ta/Au, TiWN, TiN, Indium Tin Oxide, Chromium Tin Oxide, Antimony Tin Oxide, Znic Aluminum Oxide and Znic Tin Oxide.

16. A light-emitting device according to claim 13 , wherein the particles made from the hetero-material comprise a hetero-material different from the first semiconductor conductive layer.

17. A light-emitting device according to claim 16 , wherein the particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, III-V group compound, II-V group compound and II-VI group compound.

18. A light-emitting device according to claim 13 , wherein the uneven multiple quantum well are made from a nitride material.

19. A light-emitting device according to claim 13 , wherein the uneven multiple quantum well is phosphide, arsenide, or phosphorous arsenide material.

20. An epi-structure, which has a plurality of uneven multiple quantum well, comprising: a semiconductor conductive layer formed on a substrate and a multiple quantum well layer formed on said semiconductor conductive layer to form an epi-structure of multiple quantum well, wherein the characteristics of said epi-structure are on:

at least one hetero-material are scattered between said first semiconductor conductive layer and said multiple quantum well layer and configured for formation of the uneven multiple quantum well.

21. An epi-structure according to claim 20 , wherein the multiple quantum well is made from a material selected from the groups consisting of AlN, GaN, InN, AlGaN, InGaN and InAlGaN.

22. An epi-structure according to claim 20 , wherein particles made from the hetero-material comprise a hetero-material different from the semiconductor conductive layer.

23. An epi-structure according to claim 22 , wherein the particles made from the hetero-material are made from a material selected from the groups consisting of II group, III group, V group, VI group, II-V group compound, II-V group compound and II-VI group compound.

24. An epi-structure according to claim 20 , wherein the uneven multiple quantum well are made from a nitride material.