Semiconductor light-emitting device and method of fabricating the same
View Patent ↗The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
1. A semiconductor light-emitting device, comprising:
a substrate;
a first conductive type semiconductor material layer, formed on the substrate;
a light-emitting layer, formed on the first conductive type semiconductor material layer such that a partial area of the first conductive type semiconductor material layer is exposed;
a first electrode, formed on the exposed partial area of the first conductive type semiconductor material layer;
a second conductive type semiconductor material layer, formed on the light-emitting layer;
a II-IV-V group compound ohmic contact layer, formed on the second conductive type semiconductor material layer, wherein the material of the II-IV-V group compound ohmic contact layer is represented by the general formula: M x NyQ z , where M represents the II group chemical element, N represents the IV group chemical element, Q represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers;
a transparent conductive layer, formed on the II-IV-V group compound ohmic contact layer such that a partial area of the II-IV-V group compound ohmic contact layer is exposed; and
a second electrode, formed on the exposed partial area of the II-IV-V group compound ohmic contact layer and contacting the transparent conductive layer.
2. The semiconductor light-emitting device of claim 1 , wherein the substrate is formed of a material selected from a group consisting of Si, GaN, AlN, sapphire, spinnel, SiC, GaAs, Al 2 O 3 , LiGaO 2 , LiAlO 2 , and MgAl 2 O 4 .
3. The semiconductor light-emitting device of claim 1 , wherein the first conductive type semiconductor material layer and the second conductive type semiconductor material layer are formed of a GaN material, respectively.
4. The semiconductor light-emitting device of claim 1 , wherein the first conductive type is N-type, and the second conductive type is P-type.
5. The semiconductor light-emitting device of claim 1 , wherein the light-emitting layer is formed of a material selected from a group consisting of InGaN, AlGaN, and, InGaAs.
6. The semiconductor light-emitting device of claim 1 , wherein a II group chemical element in the II-IV-V group compound ohmic contact layer is one selected from the group consisting of Zn, Be, Mg, Ca, Sr, Ba, and Ra, and a IV group chemical element in the II-IV-V group compound ohmic contact layer is one selected from the group consisting of C, Si, Ge, Sn, and Pb, and a V group chemical element in the II-IV-V group compound ohmic contact layer is one selected from the group consisting of N, P, As, Sb, and Bi.
7. The semiconductor light-emitting device of claim 1 , wherein the thickness of the II-IV-V group compound ohmic contact layer ranges from 0.5 Angstroms to 500 Angstroms.
8. The semiconductor light-emitting device of claim 1 , wherein the II-IV-V group compound ohmic contact layer is formed at a temperature ranging from 400° C. to 1100° C.
9. The semiconductor light-emitting device of claim 1 , wherein the transparent conductive layer is formed of a material selected from a group consisting of Ni/Au, ITO, CTO, TiWN, In 2 O 3 , SnO 2 , CdO, ZnO, CuGaO 2 , and SrCu 2 O 2 .