Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
1. A semiconductor light-emitting device, comprising:
a substrate including an upper surface and a plurality of protrusions positioned on the upper surface, wherein each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces;
a first conductive type semiconductor layer positioned on the substrate;
a light-emitting structure positioned on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer positioned on the light-emitting structure;
wherein the centers of the top surface of adjacent six protrusions in a ring manner form a hexagon, and the area of the inclined surfaces inside the hexagon is between 1% and 5% of the area of the hexagon.
2. The semiconductor light-emitting device of claim 1 , wherein the inclined surface and the wall surface have different inclined angles.
3. The semiconductor light-emitting device of claim 1 , wherein the inclined surface connects to the wall surface, and the included angle between the inclined surface and the wall surface is between 90 and 180 degrees.
4. The semiconductor light-emitting device of claim 1 , wherein the wall surface is arc-shaped.
5. The semiconductor light-emitting device of claim 4 , wherein the base surface of the protrusion comprises a plurality of corners, and wherein the connection of the corners is arc-shaped.
6. The semiconductor light-emitting device of claim 1 , wherein the protrusion includes five wall surfaces.
7. The semiconductor light-emitting device of claim 6 , wherein the base surface of the protrusion comprises a plurality of corners, and wherein the connection of the corners is arc-shaped.
8. The semiconductor light-emitting device of claim 1 , wherein the area of the inclined surfaces of the protrusion is between 2% and 5% of the area of the base surface of the protrusion.
9. The semiconductor light-emitting device of claim 1 , wherein the wall surfaces are convex substantially without notches.
10. A semiconductor light-emitting device, comprising:
a substrate including an upper surface and a plurality of protrusions positioned on the upper surface, wherein each of the protrusions includes a ridge portion having a plurality of branches, a plurality of wall surfaces, and a plurality of inclined surfaces positioned on free ends of the branches, with the free ends being adjacent to the upper surface;
a first conductive type semiconductor layer positioned on the substrate;
a light-emitting structure positioned on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer positioned on the light-emitting structure.
11. The semiconductor light-emitting device of claim 10 , wherein the inclined surface and the wall surface have different inclined angles.
12. The semiconductor light-emitting device of claim 10 , wherein the inclined surface connects the wall surface.
13. The semiconductor light-emitting device of claim 10 , wherein the wall surface is arc-shaped.
14. The semiconductor light-emitting device of claim 10 , wherein the protrusion includes a bottom surface having at least three corners.
15. The semiconductor light-emitting device of claim 14 , wherein the connection of the corners is arc-shaped.
16. The semiconductor light-emitting device of claim 10 , wherein the protrusion includes a top surface connecting the branches.
17. The semiconductor light-emitting device of claim 16 , wherein the top surface is dart-shaped.
18. The semiconductor light-emitting device of claim 10 , wherein the ridge portion is above the wall surface.
19. The semiconductor light-emitting device of claim 10 , wherein the wall surfaces are convex substantially without notches.
20. A semiconductor light-emitting device, comprising:
a substrate including an upper surface and a plurality of protrusions positioned on the upper surface, wherein each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces;
a first conductive type semiconductor layer positioned on the substrate;
a light-emitting structure positioned on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer positioned on the light-emitting structure;
wherein the area of the inclined surfaces of the protrusion is between 2% and 5% of the area of the base surface of the protrusion.