Semiconductor light-emitting structure
View Patent ↗A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.
1. A semiconductor light-emitting structure, comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;
an electrode, disposed on the first semiconductor layer;
an insulating layer, covering a part of the electrode; and
an adhesive layer formed in a ring having inner and outer perimeters with a similar shape, comprising a plurality of stacked sub adhesive layers and disposed on a top surface and a side surface of the electrode;
wherein the insulating layer wraps the adhesive layer, a number of the plurality of stacked sub adhesive layers is greater than or equal to 3, a material of each of the plurality of stacked sub adhesive layers comprises titanium, molybdenum, thallium, nickel, aluminum, chromium, tungsten or oxides thereof, and the materials of the sub adhesive layers are different.
2. The semiconductor light-emitting structure as claimed in claim 1 , wherein the ring shape has an opening in a top-view.
3. The semiconductor light-emitting structure as claimed in claim 2 , wherein a ratio of an inner diameter of the opening to an outer diameter of the electrode is greater than 0.2 and smaller than 1.
4. The semiconductor light-emitting structure as claimed in claim 2 , wherein the opening exposes both or one of the electrode and the adhesive layer.
5. The semiconductor light-emitting structure as claimed in claim 1 , wherein a material of the insulating layer is a compound not containing metallic element.
6. The semiconductor light-emitting structure as claimed in claim 1 , wherein a thickness of the adhesive layer is between 20 Å and 1000 Å.
7. The semiconductor light-emitting structure as claimed in claim 1 , wherein the adhesive layer extends to a top surface of the first semiconductor layer.
8. The semiconductor light-emitting structure as claimed in claim 1 , wherein the adhesive layer extends to a top surface of a transparent conductive layer.
9. The semiconductor light-emitting structure as claimed in claim 1 , wherein the stacked sub adhesive layers comprise a metal layer and a metal oxide layer, and a metal element of the metal layer and a metal element of the metal oxide layer are the same.
10. The semiconductor light-emitting structure as claimed in claim 1 , wherein one of the stacked sub layers is a Ti layer, another one of the stacked sub layers is a TiO 2 layer, and the electrode comprises a gold layer contacting to the adhesive layer.
11. A semiconductor light-emitting structure, comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer, disposed between the first semiconductor layer and the second semiconductor layer;
an electrode, disposed on the first semiconductor layer and comprising:
a body; and
a first adhesive layer, disposed between the body and the first semiconductor layer to bond the body and the first semiconductor layer;
a second adhesive layer formed in a ring having inner and outer perimeters with a similar shape; and
an insulating layer substantially wrapping the first adhesive layer and the second adhesive layer;
wherein the second adhesive layer is disposed between the body and the insulating layer;
wherein the second adhesive layer comprising a plurality of stacked sub adhesive layers, a number of the plurality of stacked sub adhesive layers is greater than or equal to 3, a material of each of the plurality of stacked sub adhesive layers comprises titanium, molybdenum, thallium, nickel, aluminum, chromium, tungsten, or oxides thereof, and the materials of the sub adhesive layers are different.
12. The semiconductor light-emitting structure as claimed in claim 11 , wherein the ring shape has an opening in a top-view.
13. The semiconductor light-emitting structure as claimed in claim 11 , wherein a ratio of an inner diameter of the opening to an outer diameter of the electrode is greater than 0.2 and smaller than 1.
14. The semiconductor light-emitting structure as claimed in claim 11 , wherein the opening exposes both or one of the electrode and the second adhesive layer.
15. The semiconductor light-emitting structure as claimed in claim 11 , wherein a material of the insulating layer is a compound not containing metallic element.
16. The semiconductor light-emitting structure as claimed in claim 11 , wherein a material of the first adhesive layer is a metal element which is selected to form ohmic contact with the first semiconductor layer.
17. The semiconductor light-emitting structure as claimed in claim 11 , wherein the thickness of the second adhesive layer is between 20 Å and 1000 Å.
18. The semiconductor light-emitting structure as claimed in claim 11 , wherein the stacked sub adhesive layers comprise a metal layer and a metal oxide layer, and a metal element of the metal layer and a metal element of the metal oxide layer are the same.
19. The semiconductor light-emitting structure as claimed in claim 11 , wherein one of the stacked sub layers is a Ti layer, another one of the stacked sub layers is a TiO 2 layer, and the electrode comprises a gold layer contacting to the second adhesive layer.