Light-emitting device
View Patent ↗A structure of a light-emitting device includes the following components: a substrate; an epitaxial structure on the substrate, the epitaxial structure including at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer; a first electrode on the first conductivity type semiconductor layer; a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and a three-dimensional distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first conductivity type semiconductor layer.
1. A light-emitting device, comprising:
a substrate;
an epitaxial structure on the substrate, wherein the epitaxial structure comprises at least a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer;
a first electrode on the first conductivity type semiconductor layer;
a transparent conductive layer between the first electrode and the first conductivity type semiconductor layer; and
a distributed Bragg reflector (DBR) layer between the transparent conductive layer and the first electrode, wherein the epitaxial structure comprises a plurality of pillar structures and the pillar structures are formed under the first electrode only.
2. The light-emitting device according to claim 1 , wherein the transparent conductive layer is formed on a surface of the plurality of pillar structures.
3. The light-emitting device according to claim 1 , wherein there are recessed trenches between the pillar structures.
4. The light-emitting device according to claim 3 , wherein a depth of the recessed trenches does not exceed a thickness of the first conductivity type semiconductor layer.
5. A light-emitting device, comprising:
a substrate;
an epitaxial structure on the substrate, wherein the epitaxial structure comprises a first conductivity type semiconductor layer, a light-emitting active layer, and a second conductivity type semiconductor layer;
a first electrode on the first conductivity type semiconductor layer;
a distributed Bragg reflector (DBR) layer between the first electrode and the first conductivity type semiconductor layer; and
a transparent conductive layer between the first electrode and the epitaxial structure;
wherein the epitaxial structure comprises a plurality of pillar structures and the pillar structures are formed under the first electrode only.
6. The light-emitting device according to claim 5 , wherein the first electrode comprises a branch electrode and an electrode pad.
7. The light-emitting device according to claim 6 , wherein the pillar structure is only under the electrode pad.
8. The light-emitting device according to claim 5 , wherein the first electrode comprises a branch electrode and an electrode pad, and the transparent conductive layer overlaps with the branch electrode only.
9. The light-emitting device according to claim 5 , wherein the first electrode comprises a branch electrode and an electrode pad, and the transparent conductive layer overlaps with the branch electrode and a peripheral edge of the electrode pad only.
10. The light-emitting device according to claim 5 , further comprising a recessed trench under the first electrode.
11. The light-emitting device according to claim 10 , wherein a depth of the recessed trench does not exceed a thickness of the first conductivity type semiconductor layer.
12. The light-emitting device according to claim 10 , wherein a depth of the recessed trench does not exceed a total thickness of the first conductivity type semiconductor layer and the light-emitting active layer.
13. The light-emitting device according to claim 10 , wherein a depth of the recessed trench does not exceed a total thickness of the first conductivity type semiconductor layer, the light-emitting active layer and the second conductivity type semiconductor layer.
14. The light-emitting device according to claim 5 , further comprising a reflector disposed on the substrate, wherein the reflector and the first electrode are respectively on opposite sides of the substrate.