OHMIC CONTACT FILM IN SEMICONDUCTOR DEVICE
The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula M x Q z N y , where M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
1 . An ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device, the composition of said ohmic contact film being represented by the general formula:
M x Q z N y , and
wherein M represents the II group chemical element, Q represents the IV group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, 1≦z≦3, and x and y and z are molar numbers.
2 . The ohmic contact film of claim 1 , wherein the II group chemical element in said ohmic contact film is one selected from the group consisting of Zn, Be, Mg, Ca, Sr, Ba, and Ra, the IV group chemical element is one selected from the group consisting of C, Si, Ge, Si, and Pb, and the V group chemical element in said ohmic contact film is one selected from the group consisting of N, P, As, Sb, and Bi.
3 . The ohmic contact layer of claim 1 , wherein said ohmic contact film is formed at a temperature ranging from 400° C. to 1100° C.
4 . The ohmic contact film of claim 1 , wherein the thickness of said ohmic contact film is in a range of from 0.5 Angstroms to 500 Angstroms.
5 . The ohmic contact film of claim 1 , wherein the dopant type of the doped semiconductor material layer is N-type or P-type.
6 . The ohmic contact film of claim 1 , wherein the conductive material layer is formed of a material selected from the group consisting of Ni/Au, ITO, CTO, TiWN, In 2 O 3 , SnO 2 , CdO, ZnO, CuGaO 2 , and SrCu 2 O 2 .