Method of treating substrate
View Patent ↗A method of treating a substrate includes forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon; roughening the sidewalls by removing the fusion; and forming an epitaxial multi-layer structure on the upper surface and the nicks. The roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
1. A method of treating a substrate, comprising:
forming a plurality of nicks on an upper surface of the substrate by an electromagnetic wave without using a mask, wherein sidewalls of each nick have fusion formed thereon;
roughening the sidewalls by removing the fusion; and
forming an epitaxial multi-layer structure on the upper surface and the nicks,
wherein the roughened sidewalls of each nick comprise an average roughness equal to or larger than 1 nm.
2. The method of claim 1 , wherein the electromagnetic wave is a laser beam.
3. The method of claim 1 , wherein at least one of the nicks is formed in a circle, a trapezoid or a trace.
4. The method of claim 1 , wherein the substrate is formed of a material selected from the group consisting of Si, GaN, AlN, sapphire, spinnel, SiC, GaAs, Al2O3, LiGaO2, LiAlO2, and MgAl2O4.
5. The method of claim 1 , wherein the epitaxial multi-layer structure comprises a light-emitting region.
6. The method of claim 5 , further comprising forming an ohmic electrode structure on the light-emitting region; wherein the light-emitting region comprises an n-type layer, a multiple quantum well and a p-type layer.
7. The method of claim 1 , wherein the fusion is removed by a dry etching process or a wet etching process.
8. The method of claim 1 , wherein the epitaxial multi-layer structure is filled in the nicks.