Semiconductor light-emitting device
View Patent ↗The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.
1. A semiconductor light-emitting device, comprising:
a substrate having an upper surface;
a multi-layer structure formed on the upper surface of the substrate and comprising at least one semiconductor material layer and a light-emitting region, the multi-layer structure comprising a top-most surface;
at least one electrode structure formed on the top-most surface of the multi-layer structure;
a light reflector formed on the top-most surface of the multi-layer structure; and
a fluorescent layer formed on the light reflector, wherein the light reflector is a reflector assembly and is comprised of at least two selected from the group consisting of a blue-light reflector, a green-light reflector and a red-light reflector.
2. The semiconductor light-emitting device of claim 1 , wherein the light reflector is also formed on a side surface of the multi-layer structure and/or on a side surface of the substrate.
3. The semiconductor light-emitting device of claim 2 , wherein the light reflector is formed by alternate stack of at least one material layer with a high refractive index and at least one material layer with a low refractive index.
4. The semiconductor light-emitting device of claim 3 , wherein the at least one material layer with a high refractive index is formed of one or two selected from the group consisting of Si 3 N 4 , Ta 2 O 5 , Ta 2 O 5 , Nb 2 O 5 , CeO 2 and ZnS, the at least one material layer with a low refractive index is formed of SiO 2 and/or MgF 2 .
5. The semiconductor light-emitting device of claim 1 , wherein the at least one semiconductor material layer is formed of a II-VI group compound or a III-V group compound.
6. The semiconductor light-emitting device of claim 1 , wherein the substrate is formed of a material selected from the group consisting of SiO 2 , Si, Ge, GaN, GaAs, GaP, AIN, sapphire, spinnel, Al 2 O 3 , SiC, ZnO, MgO, LiGaO 2 , LiAlO 2 , and MgAl 2 O 4 .