Optoelectronic device
The present invention provides an optoelectronic device, which includes a first electrode, a substrate on the first electrode, and a buffer layer on the substrate. The buffer layer further includes a first gallium nitride based compound layer on the substrate, a II-V group compound layer on the first gallium nitride based compound layer, a second gallium nitride based compound layer on the II-V group compound layer, and a third gallium nitride based compound layer on the second gallium nitride based compound layer. Then, a first semiconductor conductive layer is formed on the buffer layer; an active layer is formed on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a second semiconductor conductive layer on the active layer; a transparent conductive layer on the second semiconductor conductive layer; and a second electrode on the transparent conductive layer.
1 . A stacked structure for an optoelectronic device, comprising:
a substrate;
a buffer layer on said substrate, wherein said buffer layer comprises:
a first gallium nitride based compound layer on said substrate;
a V-II group compound layer on said first gallium nitride based compound layer;
a second gallium nitride based compound layer on said V-II group compound layer; and
a third gallium nitride based compound layer on said second gallium nitride based compound layer; and
an epi-stacked structure on said buffer layer.
2 . The stacked structure according to claim 1 , wherein said substrate is selected from the group consisting of: sapphire, MgAl 2 O 4 , GaN, AlN, SiC, GaAs, AlN, GaP, Si, Ge, ZnO, MgO, LAO, LGO and glass material.
3 . The stacked structure according to claim 1 , wherein said first gallium nitride based compound layer is Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
4 . The stacked structure according to claim 1 , wherein said second gallium nitride based compound layer is an AlGaN layer.
5 . The stacked structure according to claim 1 , wherein said third gallium nitride based compound layer at least includes a semiconductor structure with an Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
6 . The stacked structure according to claim 1 , wherein said epi-stacked structure includes:
a first semiconductor conductive layer on said buffer layer;
a second semiconductor conductive layer; and
an active layer between said first semiconductor conductive layer and said second semiconductor conductive layer.
7 . The stacked structure according to claim 6 , wherein said active layer is selected from the group consisting of: double hetero-junction layer, multi quantum well (MQW) and a quantum well (QW)
8 . An optoelectronic device, comprising:
a first electrode;
a substrate on said first electrode;
a buffer layer on said substrate, wherein said buffer layer comprises:
a first gallium nitride based compound layer on said substrate;
a V-II group compound layer on said first gallium nitride based compound layer;
a second gallium nitride based compound layer on said V-II group compound layer; and
a third gallium nitride based compound layer on said second gallium nitride based compound layer;
an epi-stacked structure on said buffer layer;
a transparent conductive layer on said epi-stacked structure; and
a second electrode on said transparent conductive layer.
9 . The optoelectronic device according to claim 8 , wherein said first gallium nitride based compound layer is Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
10 . The optoelectronic device according to claim 8 , wherein said second gallium nitride based compound layer is an AlGaN layer.
11 . The optoelectronic device according to claim 8 , wherein said third gallium nitride based compound layer at least includes a semiconductor structure with an Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
12 . The optoelectronic device according to claim 8 , said epi-stacked structure includes:
a first semiconductor conductive layer on said buffer layer;
a second semiconductor conductive layer; and
an active layer between said first semiconductor conductive layer and said second semiconductor conductive layer.
13 . The optoelectronic device according to claim 8 , wherein said active layer is selected from the group consisting of: double hetero-junction layer, multi quantum well (MQW) and a quantum well (QW).
14 . The optoelectronic device according to claim 8 , wherein said transparent conductive layer is made from a material selected from the group consisting of: Ni/Au, NiO/Au, Ta/Au, TiWN, TiN, Indium Tin Oxide, Chromium Tin Oxide, Antinomy doped Tin Oxide, Zinc Aluminum Oxide and Zinc Tin Oxide.
15 . An optoelectronic device comprising:
a substrate;
a buffer layer on said substrate, wherein said buffer layer comprises:
a first gallium nitride based compound layer on said substrate;
a V-II group compound layer on said first gallium nitride based compound layer;
a second gallium nitride based compound layer on said V-II group compound layer; and
a third gallium nitride based compound layer on said second gallium nitride based compound layer;
a first semiconductor conductive layer on said buffer layer, wherein said first semiconductor conductive layer has a first portion and a second portion;
a first electrode on said second portion of said first semiconductor conductive layer;
an active layer on said first portion of said first semiconductor conductive layer and away from said first electrode;
a second semiconductor conductive layer on said active layer;
a transparent conductive layer on said active layer; and
a second electrode on said transparent conductive layer.
16 . The optoelectronic device according to claim 15 , wherein said active layer is selected from the group consisting of: double hetero-junction layer, multi quantum well (MQW) and a quantum well (QW)
17 . The optoelectronic device according to claim 15 , wherein said first gallium nitride based compound layer is Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
18 . The optoelectronic device according to claim 15 , wherein said second gallium nitride based compound layer is an AlGaN layer.
19 . The optoelectronic device according to claim 15 , wherein said third gallium nitride based compound layer at least includes a semiconductor structure with an Al x In y Ga 1-x-y N layer where x≧0, y≧0 and 0≦x+y≦1.
20 . The optoelectronic device according to claim 15 , wherein a material of said transparent conductive layer is made from a material selected from the group consisting of: Ni/Au, NiO/Au, Ta/Au, TiWN, TiN, Indium Tin Oxide, Chromium Tin Oxide, Antinomy doped Tin Oxide, Zinc Aluminum Oxide and Zinc Tin Oxide.