Method for dicing a diced optoelectronic semiconductor wafer
View Patent ↗A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.
1. A method for dicing an optoelectronic semiconductor wafer comprising steps of
preparing an optoelectronic semiconductor wafer, wherein the wafer comprises
a substrate having a first surface and a second surface;
an epitaxial layer being formed epitaxially on the first surface of the substrate;
scribing the substrate with a laser to define multiple guide grooves in the substrate and to form a black layer in each guide groove with two rough surfaces along the guide groove under the black layer;
grooving the substrate along the guide grooves with a diamond saw to scrape off the black layer in each guide groove to expose the rough surfaces; and
forming optoelectronic semiconductor dies by breaking the wafer along the guide grooves.
2. The method as claimed in claim 1 , wherein the guide grooves are defined in the second surface of the substrate.
3. The method as claimed in claim 2 , wherein the epitaxial layer is made of III-V group materials.
4. The method as claimed in claim 2 , wherein the epitaxial layer is made of II-VI group materials.
5. The method as claimed in claim 2 , wherein the epitaxial layer is made of IV group materials.
6. The method as claimed in claim 1 , wherein the method further comprises a step of removing the epitaxial layer upon an area of the first surface of the substrate before the step of scribing the substrate with a laser to define multiple guide grooves in the substrate.
7. The method as claimed in claim 6 , wherein the epitaxial layer is made of III-V group materials.
8. The method as claimed in claim 6 , wherein the epitaxial layer is made of II-VI group materials.
9. The method as claimed in claim 6 , wherein the epitaxial layer is made of IV group materials.