IP Library › Assignment 030133/0504
Patent Assignment
Reel/Frame 030133/0504

Assignment of Assignor's Interest

Recorded: 2013-04-02 Pages: 7
Assignors
CHEN, JOHN
Executed: 2010-10-05
LEE, CHIA HAO
Executed: 2011-03-01
WU, HAN MING
Executed: 2010-06-04
Assignee
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
18 ZHANG JIANG RD., PUDONG NEW AREA, SHANGHAI, 201203, CHINA
Covered Property (1)
Method for Dual Energy Implantation for Ultra-Shallow Junction Formation of Mos Devices
Patent: 8,466,050 →
Application: 12/830,241 →
Publication: US 2011/0143512
Related Assignments (1)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 3, 2013
From: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
To: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
Reel/Frame 030146/0243 →