Patent Assignment
Reel/Frame 030274/0802
Assignment of Assignor's Interest
Recorded: 2013-04-24
Pages: 2
Assignors
STRAUBINGER, THOMAS
Executed: 2010-11-22
VOGEL, MICHAEL
Executed: 2010-11-25
WOHLFART, ANDREAS
Executed: 2010-11-22
Assignee
SICRYSTAL AG
GUENTHER-SCHAROWSKY-STRASSE 1, ERLANGEN, D-91058, GERMANY
Covered Property
(1)
Method of Producing a Silicon Carbide Bulk Single Crystal with Thermal Treatment, and Low-Impedance Monocrystalline Silicon Carbide Substrate
Application:
12/902,704 →
Publication:
US 2011/0086213
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.
Change of Address
Dec 19, 2012
From: SICRYSTAL AG
To: SICRYSTAL AG
Reel/Frame 029497/0430 →
Corrective Assignment to Correct the Assignee Address Incorrectly Listed Previously Recorded on Reel 030274 Frame 0802. Assignor(S) Hereby Confirms the Correct Assignee Address Is Sicrystal Ag, Thurn-Und-Taxis-Str. 20, D-90411 Nuernberg, Germany.
Apr 29, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 030311/0441 →