IP Library › Assignment 029497/0430
Patent Assignment
Reel/Frame 029497/0430

Change of Address

Recorded: 2012-12-19 Pages: 11
Assignor
SICRYSTAL AG
Executed: 2011-10-17
Assignee
SICRYSTAL AG
THURN-UND-TAXIS-STR. 20, NUERNBERG, 90411, GERMANY
Covered Properties (14)
A Device for Producing Sic Single Crystals
Patent: 5,707,446 →
Application: 08/530,291 →
Process for Producing High-Resistance Silicon Carbide
Patent: 5,856,231 →
Application: 08/596,119 →
Process and Device for Sublimation Growing of Silicon Carbide Monocrystals
Patent: 5,989,340 →
Application: 08/913,278 →
Method for Producing Silicon Carbide Monocrystals
Patent: 5,968,265 →
Application: 09/013,990 →
Seed Crystal for Producing Monocrystals and Method for Producing Sic Monocrystals or Monocrystalline Sic Layers
Patent: 5,985,026 →
Application: 09/023,955 →
Method for Growing Sic Single Crystals
Patent: 6,497,764 →
Application: 09/761,808 →
Publication: US 2001/0015169
Device and method for producing at least one SiC single crystal
Patent: 6,344,085 →
Application: 09/761,809 →
Publication: US 2001/0004875
Method for Growing an Alpha-Sic Bulk Single Crystal
Patent: 6,689,212 →
Application: 09/933,049 →
Publication: US 2002/0014199
Device Having a Foil-Lined Crucible for the Sublimation Growth of an Sic Single Crystal
Patent: 6,770,136 →
Application: 10/042,058 →
Publication: US 2002/0096108
Method for the Sublimation Growth of an Sic Single Crystal, Involving Heating Under Growth Pressure
Patent: 6,773,505 →
Application: 10/042,060 →
Publication: US 2002/0083885
Seed Crystal Holder with Lateral Mount for an Sic Seed Crystal
Patent: 6,723,166 →
Application: 10/042,099 →
Publication: US 2002/0088391
Thermally Insulated Configuration and Method for Producing a Bulk Sic Crystal
Application: 12/686,788 →
Publication: US 2010/0175614
Production Method for a Bulk Sic Single Crystal with a Large Facet and Monocrystalline Sic Substrate with Homogeneous Resistance Distribution
Patent: 8,865,324 →
Application: 12/852,642 →
Publication: US 2011/0300323
Method of Producing a Silicon Carbide Bulk Single Crystal with Thermal Treatment, and Low-Impedance Monocrystalline Silicon Carbide Substrate
Application: 12/902,704 →
Publication: US 2011/0086213
Related Assignments (19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 12, 1996
From: NIEMANN, EKKEHARD; SCHNEIDER, JUERGEN; MUELLER, HARALD; MAIER,HILDEGARD INGE
To: DAIMIER-BENZ AKTIENGESELLSCHAFT
Reel/Frame 008108/0754 →
Assignment of Assignor's Interest Dec 26, 2001
From: KUHN, HARALD; RUPP, ROLAND; STEIN, RENE; VOLKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 012393/0090 →
Assignment of Assignor's Interest Mar 5, 2004
From: KUHN, HARALD; STEIN, RENE; VIELKI, JOHANNES; ZINTI, WOLFGANG
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015038/0860 →
Assignment of Assignor's Interest Jun 18, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015471/0213 →
Assignment of Assignor's Interest Jun 24, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015489/0983 →
Document Previously Recorded at Reel 014739 Frame 0185 Contained Errors in Application Number 09/993049. Document Rerecorded to Correct Errors on Stated Reel. Jul 12, 2004
From: KUHN, HARALD; STEIN, RENE; VOLKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015552/0703 →
Assignment of Assignor's Interest Sep 22, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES; ZINTL, WOLFGANG
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015797/0124 →
Assignment of Assignor's Interest Oct 25, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: SICRYSTAL AG
Reel/Frame 015279/0832 →
Correction to a Patent Number Nov 12, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: SICRYSTAL AG
Reel/Frame 015972/0920 →
Corrective Assignment to Correct the Applicatin No.: 08/596,119 Filing Date: 04/12/1996 Patent Number: 5,856,231 Issue Date: 01/05/1999 Previously Recorded on Reel 016069 Frame 0092. Assignor(S) Hereby Confirms the Siemens Aktiengesellschaft. Aug 4, 2005
From: SIEMENS AKTIENGESELLSCHAFT
To: SICRYSTAL AG
Reel/Frame 016345/0964 →
Merger Mar 19, 2008
From: DAIMLER-BENZ AKTIENGESELLSCHAFT
To: DAIMLERCHRYSLER AG
Reel/Frame 020710/0317 →
Change of Name Mar 19, 2008
From: DAIMLERCHRYSLER AG
To: DAIMLER AG
Reel/Frame 020704/0970 →
Assignment of Assignor's Interest Aug 4, 2009
From: DAIMLER AG
To: CREE, INC.
Reel/Frame 023044/0385 →
Assignment of Assignor's Interest Feb 21, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 029851/0345 →
Corrective Assignment to Correct the Assignee Address Incorrectly Listed Previously Recorded on Reel 029851 Frame 0435. Assignor(S) Hereby Confirms the Correct Assignee Is Sicrystal Ag, Thurn-Und-Taxis-Str. 20, D-90411 Nuernberg, Germany. Feb 28, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 029894/0523 →
Assignment of Assignor's Interest Apr 24, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 030274/0802 →
Corrective Assignment to Correct the Assignee Address Incorrectly Listed Previously Recorded on Reel 030274 Frame 0802. Assignor(S) Hereby Confirms the Correct Assignee Address Is Sicrystal Ag, Thurn-Und-Taxis-Str. 20, D-90411 Nuernberg, Germany. Apr 29, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 030311/0441 →
Assignment of Assignor's Interest May 29, 2013
From: STRAUBINGER, THOMAS
To: SICRYSTAL AG
Reel/Frame 030500/0258 →
Change of Legal Form from Ag (Aktiengesellschaft / Joint-Stock Company) to Gmbh (Limited Liability Company) Jul 31, 2018
From: SICRYSTAL AG
To: SICRYSTAL GMBH
Reel/Frame 046662/0785 →