IP Library Granted Patent US 6,344,085
Granted Patent Utility
US 6,344,085 · Confirmation No. 6004

Device and method for producing at least one SiC single crystal

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Code Description Pages PDF
2001-01-16 TRNA Transmittal of New Application 1 View
2001-01-16 SPEC Specification 21 View
2001-01-16 CLM Claims 5 View
2001-01-16 ABST Abstract 1 View
2001-01-16 DRW Drawings-only black and white line drawings 3 View
2001-01-16 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,344,085
App. No.
09/761,809
Filed
2001-01-16
Granted
2002-02-05
Pub. No.
US20010004875A1
Art Unit
1765
PTA
-43 days