IP Library Assignment 046662/0785
Patent Assignment
Reel/Frame 046662/0785

Change of Legal Form from Ag (Aktiengesellschaft / Joint-Stock Company) to Gmbh (Limited Liability Company)

Recorded: 2018-07-31 Pages: 6
Assignor
SICRYSTAL AG
Executed: 2018-03-14
Assignee
SICRYSTAL GMBH
THURN-UND-TAXIS-STR. 20, NUREMBERG, 90411, GERMANY
Covered Properties (11)
Method for Growing Sic Single Crystals
Patent: 6,497,764 →
Application: 09/761,808 →
Publication: US 2001/0015169
Device and method for producing at least one SiC single crystal
Patent: 6,344,085 →
Application: 09/761,809 →
Publication: US 2001/0004875
Method for Growing an Alpha-Sic Bulk Single Crystal
Patent: 6,689,212 →
Application: 09/933,049 →
Publication: US 2002/0014199
Device Having a Foil-Lined Crucible for the Sublimation Growth of an Sic Single Crystal
Patent: 6,770,136 →
Application: 10/042,058 →
Publication: US 2002/0096108
Method for the Sublimation Growth of an Sic Single Crystal, Involving Heating Under Growth Pressure
Patent: 6,773,505 →
Application: 10/042,060 →
Publication: US 2002/0083885
Seed Crystal Holder with Lateral Mount for an Sic Seed Crystal
Patent: 6,723,166 →
Application: 10/042,099 →
Publication: US 2002/0088391
Production Method for a Bulk Sic Single Crystal with a Large Facet and Monocrystalline Sic Substrate with Homogeneous Resistance Distribution
Patent: 8,865,324 →
Application: 12/852,642 →
Publication: US 2011/0300323
Production Method for an Sic Volume Monocrystal with a Non-Homogeneous Lattice Plane Course and a Monocrystalline Sic Substrate with a Non-Homogeneous Lattice Plane Course
Patent: 8,758,510 →
Application: 13/338,639 →
Publication: US 2013/0171403
Production Method for an Sic Volume Monocrystal with a Homogeneous Lattice Plane Course and a Monocrystalline Sic Substrate with a Homogeneous Lattice Plane Course
Patent: 8,747,982 →
Application: 13/338,694 →
Publication: US 2013/0171402
Monocrystalline Sic Substrate with a Non-Homogeneous Lattice Plane Course
Patent: 9,590,046 →
Application: 14/258,345 →
Publication: US 2014/0225127
Method for Producing a Vanadium-Doped Silicon Carbide Volume Monocrystal, and Vanadium-Doped Silicon Carbide Substrate
Patent: 9,732,438 →
Application: 14/848,560 →
Publication: US 2016/0068994
Related Assignments (14)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Dec 26, 2001
From: KUHN, HARALD; RUPP, ROLAND; STEIN, RENE; VOLKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 012393/0090 →
Assignment of Assignor's Interest Mar 5, 2004
From: KUHN, HARALD; STEIN, RENE; VIELKI, JOHANNES; ZINTI, WOLFGANG
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015038/0860 →
Assignment of Assignor's Interest Jun 18, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015471/0213 →
Assignment of Assignor's Interest Jun 24, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015489/0983 →
Document Previously Recorded at Reel 014739 Frame 0185 Contained Errors in Application Number 09/993049. Document Rerecorded to Correct Errors on Stated Reel. Jul 12, 2004
From: KUHN, HARALD; STEIN, RENE; VOLKL, JOHANNES
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015552/0703 →
Assignment of Assignor's Interest Sep 22, 2004
From: KUHN, HARALD; STEIN, RENE; VOELKL, JOHANNES; ZINTL, WOLFGANG
To: SIEMENS AKTIENGESELLSCHAFT
Reel/Frame 015797/0124 →
Assignment of Assignor's Interest Oct 25, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: SICRYSTAL AG
Reel/Frame 015279/0832 →
Correction to a Patent Number Nov 12, 2004
From: SIEMENS AKTIENGESELLSCHAFT
To: SICRYSTAL AG
Reel/Frame 015972/0920 →
Assignment of Assignor's Interest Mar 13, 2012
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AKTIENGESELLSCHAFT
Reel/Frame 027849/0296 →
Assignment of Assignor's Interest Aug 17, 2012
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AKTIENGESELLSCHAFT
Reel/Frame 028806/0272 →
Change of Address Dec 19, 2012
From: SICRYSTAL AG
To: SICRYSTAL AG
Reel/Frame 029497/0430 →
Assignment of Assignor's Interest Feb 21, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 029851/0345 →
Corrective Assignment to Correct the Assignee Address Incorrectly Listed Previously Recorded on Reel 029851 Frame 0435. Assignor(S) Hereby Confirms the Correct Assignee Is Sicrystal Ag, Thurn-Und-Taxis-Str. 20, D-90411 Nuernberg, Germany. Feb 28, 2013
From: STRAUBINGER, THOMAS; VOGEL, MICHAEL; WOHLFART, ANDREAS
To: SICRYSTAL AG
Reel/Frame 029894/0523 →
Assignment of Assignor's Interest Sep 11, 2015
From: MUELLER, RALF; STOCKMEIER, MATTHIAS; VOGEL, MICHAEL
To: SICRYSTAL AG
Reel/Frame 036539/0571 →