Assignment of Assignor's Interest

Recorded: 2015-09-11 Pages: 2

Assignors

MUELLER, RALF

Executed: 2015-09-10

STOCKMEIER, MATTHIAS

Executed: 2015-09-02

VOGEL, MICHAEL

Executed: 2015-09-02

Assignee

SICRYSTAL AG

THURN-UND TAXIS-STRASSE 20, NUERNBERG, D-90411, GERMANY

Covered Property (1)

Method for Producing a Vanadium-Doped Silicon Carbide Volume Monocrystal, and Vanadium-Doped Silicon Carbide Substrate

Patent: 9,732,438 →

Application: 14/848,560 →

Publication: US 2016/0068994

Related Assignments (1)

Other recorded transfers of the patent in this record — the chain of ownership.