Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
View Patent ↗A method is used for producing an SiC volume monocrystal by sublimation growth. During growth, by sublimation of a powdery SiC source material and by transport of the sublimated gaseous components into the crystal growth region, an SiC growth gas phase is produced there. The SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. The SiC seed crystal is bent during a heating phase before such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted, the lattice planes at each point have an angle of inclination relative to the direction of the center longitudinal axis and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and at most by 0.2° from a central angle of inclination at the site of the center longitudinal axis.
1. A method for producing an SiC volume monocrystal by means of sublimation growth, which comprises the steps of:
disposing an SiC seed crystal in a crystal growth region of a growth crucible before a beginning of growth;
introducing a powdery SiC source material into an SiC storage region of the growth crucible;
producing a SiC growth gas phase during a growth period by means of sublimation of the powdery SiC source material and by means of transport of sublimated gaseous components into the crystal growth region, the SiC volume monocrystal having a central center longitudinal axis grows by means of deposition from the SiC growth gas phase on the SiC seed crystal;
bending the SiC seed crystal during a heating phase before the beginning of the growth period such that an SiC crystal structure with a non-homogeneous course of lattice planes is adjusted in the SiC seed crystal, the lattice planes at each point have an angle of inclination relative to a direction of the center longitudinal axis, and peripheral angles of inclination at a radial edge of the SiC seed crystal differ in terms of amount by at least 0.05° and by at most 0.2° from a central angle of inclination at a site of the central center longitudinal axis; and
propagating the SiC crystal structure, of the SiC seed crystal, with the non-homogeneous course of the lattice planes during growth from the SiC seed crystal into the growing SiC volume monocrystal.
2. The method according to claim 1 , which further comprises:
rigidly connecting the SiC seed crystal, before the beginning of the growth process, to a seed holder to form a holder-seed unit, the holder-seed unit being loosely inserted with a downwardly directed growth boundary surface of the SiC seed crystal in a region of an upper crucible end wall of the growth crucible into the growth crucible, and a cavity located within a wall structure of the growth crucible being formed between a rear side of the seed holder remote from the SiC seed crystal and the upper crucible end wall;
setting an axial holder dimension of the seed holder with a value in a range between 0.5 mm and 1.5 mm; and
using a holder material, which has a different coefficient of heat expansion to an SiC material of the SiC seed crystal, for the seed holder.
3. The method according to claim 2 , which further comprises setting an axial cavity dimension of the cavity with a value in a range between 100 μm and 400 μm.
4. The method according to claim 1 , which further comprises setting an axial seed dimension of the SiC seed crystal with a value in a range between 0.5 mm and 1.0 mm.
5. The method according to claim 2 , which further comprises setting an axial holder dimension of the seed holder with a value, which is at most twice as large as an axial seed dimension of the SiC seed crystal.
6. The method according to claim 2 , which further comprises:
setting an axial holder dimension of the seed holder with a value in a range between 0.9 mm and 1.1 mm; and
setting an axial seed dimension of the SiC seed crystal with a value in a range between 0.65 mm and 0.75 mm.
7. The method according to claim 2 , wherein a radial extent into a region between a side limiting face of the seed holder and a crucible side wall is provided for the cavity.
8. The method according to claim 1 , which further comprises setting a growth region diameter of the crystal growth region to be larger than a seed diameter of the SiC seed crystal.
9. The method according to claim 1 , which further comprises setting a growth region diameter of the crystal growth region to be larger by at most 20 mm than a seed diameter of the SiC seed crystal.
10. The method according to claim 8 , wherein the growth region diameter (D 4 ) is provided in a region, in which the SiC seed crystal is located.
11. The method according to claim 2 , which further comprises forming the seed holder from a holder material with a value of a coefficient of heat expansion in a range between 4·10 −6 K −1 and 6·10 −6 K −1 .
12. The method according to claim 2 , which further comprises forming the seed holder from a holder material with a value of a coefficient of heat expansion of about 5·10 −6 K −1 .