Patent Assignment
Reel/Frame 030964/0735
Change of Name
Recorded: 2013-08-07
Pages: 45
Assignor
HITACHI TOBU SEMICONDUCTOR LTD.
Executed: 2003-04-01
Assignee
RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
2-14-1, KYOBASHI, CHUO-KU, TOKYO, JAPAN
Covered Properties
(11)
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Merger
Mar 24, 2017
From: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 041731/0587 →
Merger and Change of Name
Mar 24, 2017
From: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.; RENESAS SEMICONDUCTOR KYUSHU YAMAGUCHI CO., LTD.
To: RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
Reel/Frame 042086/0581 →
Change of Address
Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →