IP Library › Assignment 042086/0581
Patent Assignment
Reel/Frame 042086/0581

Merger and Change of Name

Recorded: 2017-03-24 Pages: 35
Assignors
Assignee
RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.
111, NISHI YOKOTE-MACHI, TAKASAKI-SHI, GUNMA, JAPAN
Covered Properties (13)
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 6,858,896 →
Application: 10/046,077 →
Publication: US 2002/0115257
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 7,172,941 →
Application: 10/984,788 →
Publication: US 2005/0082609
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 7,361,557 →
Application: 11/653,404 →
Publication: US 2007/0117329
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 7,585,732 →
Application: 12/037,139 →
Publication: US 2008/0153235
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 7,843,001 →
Application: 12/539,383 →
Publication: US 2009/0294845
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 7,910,990 →
Application: 12/868,698 →
Publication: US 2010/0320533
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 8,168,498 →
Application: 12/962,499 →
Publication: US 2011/0076818
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 8,148,224 →
Application: 13/243,756 →
Publication: US 2012/0015492
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 8,377,775 →
Application: 13/396,816 →
Publication: US 2012/0142156
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 8,278,708 →
Application: 13/396,825 →
Publication: US 2012/0139040
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 8,642,401 →
Application: 13/747,557 →
Publication: US 2013/0137223
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 9,246,000 →
Application: 14/143,196 →
Publication: US 2014/0110780
Insulated Gate Type Semiconductor Device and Method for Fabricating the Same
Patent: 9,793,342 →
Application: 14/976,873 →
Publication: US 2016/0111490
Related Assignments (4)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name Aug 7, 2013
From: HITACHI TOBU SEMICONDUCTOR LTD.
To: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 030964/0735 →
Merger Mar 24, 2017
From: RENESAS EASTERN JAPAN SEMICONDUCTOR, INC.
To: RENESAS NORTHERN JAPAN SEMICONDUCTOR, INC.
Reel/Frame 041731/0587 →
Change of Address Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
Change of Address Dec 7, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044742/0288 →