Patent Assignment
Reel/Frame 031153/0401
Assignment of Assignor's Interest
Recorded: 2013-09-06
Pages: 8
Assignee
HITACHI METALS, LTD.
2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN
Covered Property
(1)
Group Iii Nitride Semiconductor Crystal, Group Iii Nitride Semiconductor Substrate, Group Iii Nitride Semiconductor Freestanding Substrate, Nitride Semiconductor Device, and Rectifier Diode
Related Assignments
(2)
Other recorded transfers of the patent in this record — the chain of ownership.