IP Library Assignment 036134/0081
Patent Assignment
Reel/Frame 036134/0081

Corporate Split and Confirmatory Assignment Effective April 1, 2015

Recorded: 2015-07-20 Pages: 9
Assignor
HITACHI METALS, LTD.
Executed: 2015-06-25
Assignee
SCIOCS COMPANY LIMITED
880 ISAGOZAWA-CHO, HITACHI-SHI, IBARAKI-KEN, JAPAN
Covered Properties (29)
Method of Manufacturing Nitride Semiconductor Substrate
Patent: 7,867,881 →
Application: 12/397,544 →
Publication: US 2009/0233423
Piezoelectric Thin Film Elemental Device, Sensor and Actuator
Patent: 8,084,925 →
Application: 12/427,348 →
Publication: US 2009/0302715
Group-Iii Nitride Semiconductor Freestanding Substrate and Manufacturing Method of the Same
Patent: 8,102,026 →
Application: 12/556,635 →
Publication: US 2010/0258812
Nitride Semiconductor Freestanding Substrate
Application: 12/571,527 →
Publication: US 2010/0272141
Nitride Semiconductor Substrate and Manufacturing Method of the Same
Patent: 8,274,087 →
Application: 12/619,972 →
Publication: US 2010/0295055
Nitride Semiconductor Substrate
Patent: 9,194,055 →
Application: 12/713,272 →
Publication: US 2010/0258911
Piezoelectric Thin Film Element and Piezoelectric Thin Film Device Including the Same
Patent: 8,310,135 →
Application: 12/797,340 →
Publication: US 2010/0314972
Piezoelectric Thin Film Element, and Piezoelectric Thin Film Device
Patent: 8,310,136 →
Application: 12/814,544 →
Publication: US 2010/0320874
Method for Manufacturing a Group Iii Nitride Semiconductor Crystal and Method for Manufacturing a Group Iii Nitride Semiconductor Substrate
Patent: 8,715,413 →
Application: 12/816,458 →
Publication: US 2011/0168082
Piezoelectric Thin Film Element, and Piezoelectric Thin Film Device
Patent: 8,232,708 →
Application: 12/816,848 →
Publication: US 2011/0006643
Piezoelectric Thin Film Element and Manufacturing Method of the Piezoelectric Thin Film Element, Piezoelectric Thin Film Device
Patent: 8,304,966 →
Application: 12/819,424 →
Publication: US 2010/0320871
Nitride Semiconductor Crystal, Manufacturing Method of the Nitride Semiconductor Freestanding Substrate and Nitride Semiconductor Device
Patent: 8,237,245 →
Application: 12/870,332 →
Publication: US 2011/0198610
Piezoelectric Thin Film Having a High Piezoelectric Constant and a Low Leak Current
Patent: 8,450,911 →
Application: 12/948,083 →
Publication: US 2011/0121690
Piezoelectric Thin Film Element and Piezoelectric Thin Film Device Using a Piezoelectric Thin Film of Alkali-Niobium Oxide Series
Patent: 8,519,602 →
Application: 13/006,842 →
Publication: US 2011/0175488
Piezoelectric Film Element Using (Na,K,Li)NBO3
Patent: 8,581,477 →
Application: 13/018,693 →
Publication: US 2011/0187237
Light Emitting Diode
Patent: 8,138,516 →
Application: 13/045,598 →
Publication: US 2011/0233587
Light Emitting Diode with Supporting Substrate Side Electrodes and Wiring Structures
Patent: 8,426,884 →
Application: 13/214,650 →
Publication: US 2012/0049224
Light Emitting Diode with a Light Source Suitable Structure
Patent: 8,436,373 →
Application: 13/217,860 →
Publication: US 2012/0126259
Method for Manufacturing Nitride Semiconductor Substrate
Patent: 8,664,123 →
Application: 13/489,570 →
Publication: US 2013/0023128
Method of Manufacturing a Nitride Semiconductor Epitaxial Substrate
Patent: 9,105,755 →
Application: 13/524,300 →
Publication: US 2013/0001644
Piezoelectric Film and Method for Manufacturing the Same, Piezoelectric Film Element and Method for Manufacturing the Same, and Piezoelectric Film Device
Patent: 8,896,187 →
Application: 13/532,081 →
Publication: US 2013/0015392
Transistor Device
Patent: 8,664,697 →
Application: 13/543,041 →
Publication: US 2013/0009212
Method for Manufacturing a Nitride Semiconductor Substrate
Patent: 9,175,417 →
Application: 13/598,175 →
Publication: US 2013/0072005
Piezoelectric Thin-Film Element and Piezoelectric Thin-Film Device
Patent: 8,446,074 →
Application: 13/636,883 →
Publication: US 2013/0009519
Piezoelectric Film-Attached Substrate, Piezoelectric Film Element and Method of Manufacturing the Same
Patent: 9,368,713 →
Application: 13/796,243 →
Publication: US 2013/0249354
Group Iii Nitride Semiconductor Crystal, Group Iii Nitride Semiconductor Substrate, Group Iii Nitride Semiconductor Freestanding Substrate, Nitride Semiconductor Device, and Rectifier Diode
Patent: 9,013,026 →
Application: 14/020,207 →
Publication: US 2014/0070371
Method of Producing Group Iii-V Compound Semiconductor Single Crystal
Application: 14/020,594 →
Publication: US 2014/0083350
Apparatus for Producing Metal Chloride Gas
Application: 14/610,000 →
Publication: US 2015/0140791
Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Device
Patent: 9,397,232 →
Application: 14/678,049 →
Publication: US 2015/0214308
Related Assignments (20)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 21, 2009
From: SHIBATA, KENJI; OKA, FUMIHITO; SUENAGA, KAZUFUMI
To: HITACHI CABLE, LTD.
Reel/Frame 022574/0283 →
Assignment of Assignor's Interest May 27, 2009
From: MEGURO, TAKESHI; SUZUKI, TAKAYUKI; IKEDA, KEN
To: HITACHI CABLE, LTD.
Reel/Frame 022739/0694 →
Assignment of Assignor's Interest Sep 10, 2009
From: ERI, TAKESHI; MEGURO, TAKESHI
To: HITACHI CABLE, LTD.
Reel/Frame 023211/0280 →
Assignment of Assignor's Interest Oct 1, 2009
From: FUJIKURA, HAJIME
To: HITACHI CABLE, LTD.
Reel/Frame 023311/0751 →
Assignment of Assignor's Interest Nov 20, 2009
From: YAMAMOTO, SHUNSUKE
To: HITACHI CABLE, LTD.
Reel/Frame 023550/0483 →
Assignment of Assignor's Interest Feb 26, 2010
From: NAKAYAMA, SATOSHI
To: HITACHI CABLE, LTD.
Reel/Frame 023995/0716 →
Assignment of Assignor's Interest Jun 9, 2010
From: SUENAGA, KAZUFUMI; SHIBATA, KENJI; SATO, HIDEKI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 024511/0370 →
Assignment of Assignor's Interest Jun 14, 2010
From: SUENAGA, KAZUFUMI; SHIBATA, KENJI; SATO, HIDEKI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 024528/0070 →
Assignment of Assignor's Interest Jun 16, 2010
From: OSHIMA, YUICHI
To: HITACHI CABLE, LTD.
Reel/Frame 024542/0739 →
Assignment of Assignor's Interest Jun 16, 2010
From: SHIBATA, KENJI; SATO, HIDEKI; SUENAGA, KAZUFUMI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 024545/0529 →
Assignment of Assignor's Interest Jul 28, 2010
From: SUENAGA, KAZUFUMI; SHIBATA, KENJI; SATO, HIDEKI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 024751/0818 →
Assignment of Assignor's Interest Aug 31, 2010
From: FUJIKURA, HAJIME
To: HITACHI CABLE, LTD.
Reel/Frame 024914/0827 →
Assignment of Assignor's Interest Nov 17, 2010
From: SHIBATA, KENJI; SUENAGA, KAZUFUMI; NOMOTO, AKIRA; WATANABE, KAZUTOSHI
To: HITACHI CABLE, LTD.
Reel/Frame 025384/0363 →
Assignment of Assignor's Interest Jan 25, 2011
From: SHIBATA, KENJI; SUENAGA, KAZUFUMI; NOMOTO, AKIRA; WATANABE, KAZUTOSHI
To: HITACHI CABLE, LTD.
Reel/Frame 025690/0666 →
Assignment of Assignor's Interest Apr 6, 2011
From: UNNO, TSUNEHIRO
To: HITACHI CABLE, LTD.
Reel/Frame 026080/0602 →
Assignment of Assignor's Interest Apr 11, 2011
From: SUENAGA, KAZUFUMI; SHIBATA, KENJI; WATANABE, KAZUTOSHI; NOMOTO, AKIRA
To: HITACHI CABLE, LTD.
Reel/Frame 026103/0270 →
Assignment of Assignor's Interest Sep 14, 2011
From: MIZUTANI, TOMOYA; UNNO, TSUNEHIRO
To: HITACHI CABLE, LTD.
Reel/Frame 026903/0759 →
Merger Oct 8, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 033908/0802 →
Merger Dec 22, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034565/0727 →
Assignment of Assignor's Interest Jan 19, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037524/0275 →