Light emitting diode with supporting substrate side electrodes and wiring structures
A light emitting diode, comprising: a wiring layer; and a semiconductor light emitting element provided on the wiring layer, the semiconductor light emitting element further comprising: a semiconductor light emitting layer; a transparent conductive layer; a metal reflection layer; a transparent insulating film; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film with an isolating region interposed between them, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer by a first contact part, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part which is provided to pass through the transparent insulating film, the transparent conductive layer, the first semiconductor layer, and the active layer.
1. A light emitting diode, comprising:
a wiring layer; and
a semiconductor light emitting element provided on the wiring layer,
the semiconductor light emitting element further comprising:
a semiconductor light emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer in an order from the wiring layer side;
a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer;
a metal reflection layer provided on the wiring layer side of the transparent conductive layer;
a transparent insulating film provided on the wiring layer side of the metal reflection layer so as to cover the metal reflection layer; and
a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film with an isolating region interposed between them, so as to be electrically connected to the wiring layer,
wherein the first electrode part is electrically connected to the first semiconductor layer by the transparent conductive layer and a first contact part provided to pass through the transparent insulating film, and the second electrode part electrically connected to the second semiconductor layer by a second contact part which is provided to pass through the transparent insulating film, and is provided to pass through the transparent conductive layer, the first semiconductor layer, and the active layer, while being insulated therefrom.
2. The light emitting diode according to claim 1 , wherein the first electrode part and the second electrode part are bonded to the wiring layer by planar bonding.
3. The light, emitting diode according to claim 1 , wherein the first electrode part and the second electrode part have an Au-based bonding layer, and are bonded to the Au-based wiring layer through the bonding layer.
4. The light emitting diode according to claim 1 , wherein the first semiconductor layer, the active layer, and the second semiconductor layer, which form the semiconductor light emitting layer, are made of a nitride semiconductor respectively, and the metal reflection layer is made of Ag.
5. The light emitting diode according to claim 1 , wherein a plurality of semiconductor light emitting elements are provided on the wiring layer.
6. The light emitting diode according to claim 1 , wherein a light extraction surface subjected to a roughening process is formed at an opposite side to the wiring layer of the semiconductor light emitting layer.
7. The light emitting diode according to claim 6 , wherein a transmissive conductive film is formed on the light extraction surface.
8. The light emitting diode according to claim 1 , wherein the wiring layer is provided on an insulating substrate, and two or more through holes are formed on the insulating substrate, and a metal material is provided into the through holes, to thereby form substrate contact parts which are electrically connected to the wiring layer.
9. A light emitting diode, comprising:
a wiring layer; and
a semiconductor light emitting element provided on the wiring layer,
the semiconductor light emitting element further comprising:
a semiconductor light emitting layer including a first semiconductor layer, an active layer, and a second semiconductor layer in an order from the wiring layer side;
a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer;
a transparent insulating film provided on the wiring layer side of the transparent conductive layer; and
a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film with an isolating region interposed between them, so as to be electrically connected to the wiring layer,
wherein the first electrode part is electrically connected to the first semiconductor layer by the transparent conductive layer and a first contact part provided to pass through the transparent insulating film, and the second electrode part electrically connected to the second semiconductor layer by a second contact part which is provided to pass through the transparent insulating film, and is provided to pass through the transparent conductive layer, the first semiconductor layer, and the active layer, while being insulated therefrom.