IP Library Granted Patent US 8,519,602
Granted Patent B2
US 8,519,602 · App. 13/006,842 · Granted Aug 27, 2013

Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series

Inventors: Kenji Shibata (Tsukuba, JP); Kazufumi Suenaga (Tsuchiura, JP); Akira Nomoto (Kasumigaura, JP); Kazutoshi Watanabe (Tsuchiura, JP)
Assignee: Hitachi Cable, Ltd.
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Quick Facts
Patent No.
US 8,519,602
App. No.
13/006,842
Granted
Aug 27, 2013
Kind
B2
Abstract

To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K 1-x Na x ) y NbO 3 , wherein the composition ratio x of the piezoelectric thin film expressed by (K 1-x Na x ) y NbO 3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.

Claims (15)

1. A piezoelectric thin film element, comprising:

a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K 1-x Na x ) y NbO 3 ,

wherein the composition ratio x of the piezoelectric thin film expressed by (K 1-x Na x ) y NbO 3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.

2. The piezoelectric thin film element according to claim 1 , wherein the piezoelectric thin film has a pseudo-cubic crystal structure.

3. The piezoelectric thin film element according to claim 1 , wherein the piezoelectric thin film has a pseudo-cubic crystal structure, and is preferentially oriented to (001) plane direction.

4. The piezoelectric thin film element according to claim 1 , wherein a composition ratio (K+Na)/Nb of the piezoelectric thin film is in a range of 0.7 or more and 0.94 or less.

5. The piezoelectric thin film element according to claim 1 , comprising:

a lower electrode at the substrate side of the piezoelectric thin film; and

an upper electrode at an opposite side to the substrate of the piezoelectric thin film.

6. The piezoelectric thin film element according to claim 5 , wherein the lower electrode is made of platinum, and is preferentially oriented to (111) plane direction.

7. A piezoelectric thin film device, comprising:

a lower electrode provided on a substrate;

a piezoelectric thin film provided on the lower electrode, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K 1-x Na x ) y NbO 3 , with the composition ratio x being in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement being in a range of 0.5° or more and 2.5° or less;

an upper electrode provided on the piezoelectric thin film; and

a function generator or a voltage detection unit connected between the lower electrode and the upper electrode.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2016
From: SCIOCS COMPANY LIMITED
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 037524/0275 →
CORPORATE SPLIT AND CONFIRMATORY ASSIGNMENT EFFECTIVE APRIL 1, 2015 Recorded Jul 20, 2015
From: HITACHI METALS, LTD.
To: SCIOCS COMPANY LIMITED
Reel/Frame 036134/0081 →
MERGER Recorded Dec 22, 2014
From: HITACHI CABLE, LTD.
To: HITACHI METALS, LTD.
Reel/Frame 034565/0727 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2011
From: SHIBATA, KENJI; SUENAGA, KAZUFUMI; NOMOTO, AKIRA; WATANABE, KAZUTOSHI
To: HITACHI CABLE, LTD.
Reel/Frame 025690/0666 →
Priority Claims (1)
JP 2010-007942 · Jan 18, 2010 · national
Continuity (1)
Related Publication 20110175488A1 · Jul 21, 2011