METHOD OF PRODUCING GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Provided is a method of producing a group III-V compound, comprising: producing a raw material by housing a group III-V compound semiconductor crystal containing group III element and group V element and an impurity in a crucible, and heating and melting the group III-V compound semiconductor crystal in a state that a surface of the group III-V compound semiconductor crystal to an atmosphere in the crucible; growing the group III-V compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal.
1 . A method of producing a group III-V compound semiconductor single crystal, using a Liquid Encapsulated Czochralski method, comprising:
producing a raw material by housing a group III-V compound semiconductor crystal containing group III element and group V element and an impurity in a crucible, and heating and melting the group III-V compound semiconductor crystal in a state that a surface of the group III-V compound semiconductor crystal to an atmosphere in the crucible;
growing the group III-V compound semiconductor single crystal by heating the raw material and an encapsulant by adding the encapsulant into the crucible in which the raw material is housed, and making a seed crystal in contact with a melt of the raw material with a liquid surface covered by the encapsulant in a liquid state, and lifting the seed crystal.
2 . The method of claim 1 , wherein in producing the raw material, an inside of the crucible is set in an inert gas atmosphere of not less than a steam pressure of the group V element and not more than the steam pressure of a gas component containing the impurity.
3 . The method of claim 1 , wherein in producing the raw material, an inside of the crucible is set in an inert gas atmosphere of a pressure of 5 MPa or more and 8 MPa or less.
4 . The method of claim 2 , wherein in producing the raw material, an inside of the crucible is set in an inert gas atmosphere of a pressure of 5 MPa or more and 8 MPa or less.
5 . The method of claim 1 , wherein in producing the raw material, an upper portion of the crucible is covered by a lid.
6 . The method of claim 2 , wherein in producing the raw material, an upper portion of the crucible is covered by a lid.
7 . The method of claim 3 , wherein in producing the raw material, an upper portion of the crucible is covered by a lid.
8 . The method of claim 1 , wherein the impurity is composed of an element that controls conductivity of a group III-V compound semiconductor.
9 . The method of claim 2 , wherein the impurity is composed of an element that controls conductivity of a group III-V compound semiconductor.
10 . The method of claim 3 , wherein the impurity is composed of an element that controls conductivity of a group III-V compound semiconductor.
11 . The method of claim 5 , wherein the impurity is composed of an element that controls conductivity of a group III-V compound semiconductor.
12 . The method of claim 1 , wherein the impurity is C.
13 . The method of claim 2 , wherein the impurity is C.
14 . The method of claim 3 , wherein the impurity is C.
15 . The method of claim 5 , wherein the impurity is C.
16 . The method of claim 8 , wherein the impurity is C.
17 . The method of claim 1 , wherein in growing the group III-V compound semiconductor single crystal,
an impurity of the same kind as the above impurity is incorporated into the raw material through the encapsulant that covers a liquid surface of the raw material, to thereby grow a semi-insulating group III-V compound semiconductor single crystal containing the impurity, and
when incorporating the impurity into the raw material,
incorporation of the impurity into the raw material is accelerated by the encapsulant.
18 . The method of claim 2 , wherein in growing the group III-V compound semiconductor single crystal,
an impurity of the same kind as the above impurity is incorporated into the raw material through the encapsulant that covers a liquid surface of the raw material, to thereby grow the semi-insulating group III-V compound semiconductor single crystal containing the impurity, and
when incorporating the impurity into the raw material,
incorporation of the impurity into the raw material is accelerated by the encapsulant.
19 . The method of claim 3 , wherein in growing the group III-V compound semiconductor single crystal,
an impurity of the same kind as the above impurity is incorporated into the raw material through the encapsulant that covers a liquid surface of the raw material, to thereby grow the semi-insulating group III-V compound semiconductor single crystal containing the impurity, and
when incorporating the impurity into the raw material,
incorporation of the impurity into the raw material is accelerated by the encapsulant.
20 . The method of claim 1 , wherein the group III element is at least any one of Ga, In, and Al, and the group V element is at least any one of As, P, and N.