Assignment of Assignor's Interest

Recorded: 2013-09-09 Pages: 3

Assignor

KIMURA, TAKESHI

Executed: 2013-09-02

Assignee

HITACHI METALS, LTD.

2-1, SHIBAURA 1-CHOME, MINATO-KU, TOKYO, JAPAN

Covered Property (1)

Method of Producing Group Iii-V Compound Semiconductor Single Crystal

Application: 14/020,594 →

Publication: US 2014/0083350

Related Assignments (2)

Other recorded transfers of the patent in this record — the chain of ownership.