Light emitting diode

1. A light emitting diode, comprising:

a substrate;

a metal wiring layer disposed on the substrate;

a light emitting element provided on the metal wiring layer;

wherein the light emitting element comprises:

a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially;

a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer;

a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer;

a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and

a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electrically connecting the second electrode part and the second semiconductor layer.

2. The light emitting diode according to claim 1 , wherein a plurality of light emitting elements are provided on the metal wiring layer.

3. The light emitting diode according to claim 1 , wherein the first electrode part and the second electrode part have a metal reflection layer for reflecting light from the semiconductor light emitting layer.

4. The light emitting diode according to claim 1 , wherein an insulator is provided between the first electrode part and the second electrode part provided so as to be separated from each other.

5. The light emitting diode according to claim 1 , wherein the first electrode part and the second electrode part have a bonding metal layer, and are joined with the metal wiring layer through the bonding metal layer.

6. The light emitting diode according to claim 1 , wherein the second contact part is provided on the second electrode part, and is made of an insulating material for insulating from the first semiconductor layer and the active layer, and is also made of an Au-based material provided so as to be covered with the insulating material.

7. The light emitting diode according to claim 1 , wherein a surface of an opposite side to the active layer of the second semiconductor layer is a light extraction surface which is subjected to surface-roughening process.

8. The light emitting diode according to claim 1 , wherein a rear surface contact part is formed, so as to be electrically connected to the metal wiring layer by forming a through hole in the substrate and providing a conductive material into the through hole.

9. The light emitting diode according to claim 2 , wherein the metal wiring layer is formed into a pattern in which the plurality of light emitting elements are connected in series.

10. The light emitting diode according to claim 7 , wherein a conductive film having a translucency is formed on the light extraction surface.