Piezoelectric thin film element and manufacturing method of the piezoelectric thin film element, piezoelectric thin film device
To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦0, 2, x+y+z=1) as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less.
1. A piezoelectric thin film element, comprising:
a substrate; and
a piezoelectric thin film formed on the substrate, with perovskite oxide expressed by (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0 ≦z≦0.2, x+y+z=1) as a main phase,
wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less, and
a variation rate of a curvature radius of a warpage shape of the substrate that increases/decreases according to a variation rate of a thickness of the substrate, is twice or more of the variation rate of the thickness of the substrate.
2. The piezoelectric thin film element according to claim 1 , wherein a base layer for controlling an orientation of the piezoelectric thin film, is formed between the substrate and the piezoelectric thin film.
3. The piezoelectric thin film element according to claim 2 , wherein the base layer is a Pt thin film formed in orientation to (111) plane.
4. The piezoelectric thin film element according to claim 2 , wherein a lower electrode layer is formed between the substrate and the base layer, and an adhesive layer is formed between the lower electrode layer and the substrate, and an absolute value of an internal stress of the adhesive layer or the base layer or both layers is 1.6 GPa or less.
5. The piezoelectric thin film element according to claim 1 , wherein the curvature radius of the piezoelectric thin film is 0.8 m or more.
6. The piezoelectric thin film element according to claim 1 , wherein an upper electrode layer is formed on the piezoelectric thin film, and a lower electrode layer is formed between the substrate and the piezoelectric thin film, and a curvature radius of the lower electrode layer or the upper electrode layer or both electrode layers is 0.8 m or more.
7. The piezoelectric thin film element according to claim 1 , wherein the piezoelectric thin film is formed in an atmosphere of Ar gas or a mixed gas in which oxygen is mixed into the Ar gas by a sputtering method, and Ar is contained in the piezoelectric thin film.
8. The piezoelectric thin film element according to claim 1 , wherein the substrate is a Si substrate with an oxide film.
9. A manufacturing method of manufacturing the piezoelectric thin film element according to claim 1 , wherein an absolute value of an internal stress of the piezoelectric thin film is controlled in a range of 0.9 GPa or less.
10. A piezoelectric thin film device, comprising the piezoelectric thin film element according to claim 1 and a voltage application part or a voltage detection part.
11. A piezoelectric thin film element, comprising:
a substrate; and
a piezoelectric thin film formed on the substrate, with perovskite oxide expressed by (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0 ≦z≦0.2, x+y+z=1) as a main phase,
wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less,
a base layer for controlling an orientation of the piezoelectric thin film, is formed between the substrate and the piezoelectric thin film,
a lower electrode layer is formed between the substrate and the base layer, and an adhesive layer is formed between the lower electrode layer and the substrate, and
an absolute value of an internal stress of the adhesive layer or the base layer or both layers is 1.6 GPa or less.
12. A piezoelectric thin film device, comprising the piezoelectric thin film element according to claim 11 and a voltage application part or a voltage detection part.
13. A piezoelectric thin film element, comprising:
a substrate;
a piezoelectric thin film formed on the substrate, with perovskite oxide as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less; and
a variation rate of a curvature radius of a warpage shape of the substrate that increases/decreases according to a variation rate of a thickness of the substrate, is twice or more of the variation rate of the thickness of the substrate.
14. The piezoelectric thin film element according to claim 13 , wherein the piezoelectric thin film contains Ar.
15. The piezoelectric thin film device, comprising the piezoelectric thin film element according to claim 13 and a voltage application part or a voltage detection part.
16. A piezoelectric thin element, comprising:
a substrate;
a piezoelectric thin film formed on the substrate, with perovskite oxide as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less;
a base layer for controlling an orientation of the piezoelectric thin film, the base layer formed between the substrate and the piezoelectric thin film;
a lower electrode layer formed between the substrate and the base layer; and
an adhesive layer formed between the lower electrode layer and the substrate,
wherein an absolute value of an internal stress of the adhesive layer or the base layer or both layers is 1.6 GPa or less.
17. The piezoelectric thin film element according to claim 16 , wherein the base layer is a Pt thin film formed in orientation to (111) plane.
18. The piezoelectric thin film element according to claim 16 , wherein the curvature radius of the piezoelectric thin film is 0.8 m or more.
19. The piezoelectric thin film element according to claim 16 , wherein an upper electrode layer is formed on the piezoelectric thin film, and a curvature radius of the lower electrode layer or the upper electrode layer or both electrode layers is 0.8 m or more.
20. The piezoelectric thin film element according to claim 16 , wherein the piezoelectric thin film contains Ar.
21. The piezoelectric thin film element according to claim 16 , wherein the substrate is a Si substrate with an oxide film.
22. A manufacturing method of manufacturing the piezoelectric thin film element according to claim 16 , wherein an absolute value of an internal stress of the piezoelectric thin film is controlled in a range of 0.9 GPa or less.
23. A piezoelectric thin film device, comprising the piezoelectric thin film element according to claim 16 and a voltage application part or a voltage detection part.